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Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
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Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses
Інший ID:
PACS 61.43.Fs
Посилання:
Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses / T.S. Kavetskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 136-139. — Бібліогр.: 26 назв. — англ.
Підтримка:
The author would like to thank Prof. Volodymyr
Tsmots (Drohobych Ivan Franko State Pedagogical
University) for stimulating discussions. This work is
supported in part by the State Fund for Fundamental
Researches of Ukraine (project #F40.2/019).
Дата:
2013
Переглядів:
735
Завантажень:
348
Анотація:
Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated
void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp
diffraction peak (FSDP) position, Q₁, and nanovoid diameter, D, are modified to be
presented in the form of Q₁ = 1.75×π/D, taking into account a newly deduced formula for
positron lifetime, τ₂, versus void radius, R. It is valid for those molecular substrates for R
up to 5 Å and when no orthopositronium (o-Ps) or very small fractions of o-Ps
components are observed in positron annihilation lifetime spectroscopy.
