Surface microrelief obtained by composed target deposition for LC molecules alignment

Abstract

Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by CRS method for various In, Sn concentration and by the polyimide rubbing method are compared. It was shown that such aligning microrelief can create defectless and perfect at the microscopic level nematic LC oriented structures.