Voronin V.O., Guba S.K., Kurylo I.V.
Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3 -HCl-SnCl2 -H2 -He system [текст статьи отсутствует]
Kerrour F., Hobar F.
A novel numerical approach for the modelling of the square shaped silicon membrane [текст статьи отсутствует]