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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Confined LO phonon limited free carrier absorption in quantum well wires 
    Ibragimov, G.B.; Huseyin, Derin; Halil, Yaraneri (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The theory of free-carrier absorption is given for quantum well wire for the case where the carriers are scattered by confined longitudinal-optical (LO) phonons and the radiation field is polarized along the length of the ...
  • Conductivity and photoconductivity peculiarities observed in C₆₀ layers 
    Kanev, St.; Nenova, Z.; Koprinarov, N.; Ivanova, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Thin layers of various thickness prepared from C60 with traces of C70 were studied. They were deposited by thermal evaporation on quartz, glass, p-Si or n-Si substrates. An apparatus fixing current values every 3 ms was ...
  • Photoabsorption and photoconductivity in C₆₀ layers 
    Kanev, St.; Nenova, Z.; Koprinarov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A complex investigation of the photoconductivity of fullerene films, prepared by thermal evaporation in vacuum, was carried out. The investigated films contain predominantly C₆₀ in various phases as shown elsewhere. The ...
  • Magnetic field impact on electrical properties of ZnSe-GaAs solid solutions 
    Brodovoy, А.V.; Veremenko, A.M.; Skryshevsky, V.A.; Vlasyuk, А.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of constant magnetic field on thermostimutated current, photoconductivity, and magnetic susceptibility of ZnSe-GaAs solid solutions were studied. It was shown that exposition in constant magnetic field results ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • Photoemission spectra of indium selenide 
    Katerynchuk, V.M.; Kovalyuk, M.Z.; Tovarnitskii, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    For layered InSe crystals photoluminescence spectra were investigated and the corresponding radiative transitions were analyzed. It was found that along with the band-to-band transitions the radiative ones with participation ...
  • Cadmium phosphide as a new material for infrared converters 
    Stepanchikov, D.; Shutov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact ...
  • Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells 
    Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the ...
  • Thermodynamical length scales temperatures correlation for the Ginzburg-Landau theory 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The emergence of the superconducting state must obey to a variational principle representations, as considered in the classical schemes, the invariance of the extremum values, according to the use of thermodynamical ...
  • The logical closure limit of superconductivity descriptions 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The quantum description of macroscopic behaviour seems requiring the existence of limits imposed by the consideration hold on the logical closure of the theory, according to this, the J.A. Wheeler black box [1] will act ...
  • A silicon carbide thermistor 
    Boltovets, N.S.; Kholevchuk, V.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, P.M.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider a silicon carbide thermistor with multilayer Au–TiBx–Ni2Si ohmic contacts intended for operation in the 77 to 450 K temperature range.
  • Radar cross section study from wave scattering structures 
    Redadaa, S.; Boualleg, A.; Benslama, N. Merabtine M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Radar remote sensing deals with the extraction of object information from electromagnetic wave parameters. To fully exploit the potential of acquiring quantitative information requires a detailed description of the microwaves ...
  • The theory of exciton states in quasi-zero-dimensional semiconductor systems 
    Pokutnyi, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    For a semiconductor quantum dot (QD), the contributions made to the exciton energy spectrum by the electron and hole kinetic energies, the energy of Coulomb interaction between them, and the energy of their polarization ...
  • Polarizability of D+X complex in bulk semiconductors 
    Katih, M.; Diouri, J.; El Haddad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The electric polarizability α of ionized-donor-bound exciton D+X in bulk semiconductor is calculated for all values of the effective electron-to-hole mass ratio σ included in the range of stability (σ<σχ). The calculation ...
  • Electric properties of TlInS₂ single crystals 
    Mustafaeva, S.N.; Ismailov, A.A.; Akhmedzade, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration ...
  • Modelling vacancy microvoid formation in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Koryagin, S.A.; Semikina, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling ...
  • Kinoform syntesis as an improved method to form a concealed image in optical security devices 
    Braginets, E.V.; Girnyk, V.I.; Kostyukevych, S.A.; Kurashov, V.N.; Soroka, A.A.; Moskalenko, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    It is well known that one of the basic functions of security holograms is the maximal complication of their non-authorized reproduction, in other words – counterfeiting. To solve the problem, concealed images that can be ...
  • Surface microrelief obtained by composed target deposition for LC molecules alignment 
    Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Technology of SiOx:In,Sn aligning films deposited by the cathode reactive sputtering (CRS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are ...

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