Interface roughness induced intrasubband scattering in a quantum well under an electric field

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1
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Interface roughness induced intrasubband scattering in a quantum well under an electric field

Інший ID: PACS: 68.65,73.20.D

URI: http://dspace.nbuv.gov.ua/handle/123456789/119564

Посилання: Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ.

Підтримка: The author would like to thank Prof. М.I. Aliev and Prof. F.М. Gashimzade for helpful discussions.

Дата: 2002

Завантажень: 294

Interface roughness induced intrasubband scattering in a quantum well under an electric field

Анотація:

Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case.

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