ЗМІСТ

Deibuk V.G., Shakhovtsova S.I., Shenderovski V.A., Tsmots V.M.
Electronic band structure and magnetic susceptibility of Ge_1-xSi_x solid solutions

Kunets V.P., Kulish N.R., Kunets Vas.P., Lisitsa M.P.
Urbach’s rule peculiarities in structures with CdS_XSe_1-X nanocrystals

Ivashchenko V.I., Shevchenko V.I.
Atomic and electronic structure of a-SiC

Vakhnyak N.D., Krylyuk S.G., Kryuchenko Yu.V., Kupchak I.M.
Influence of g-irradiation on photoluminescence spectra of CdTe:Cl

Lysiuk I.O., Machulin V.F., Olikh Ja.M.
Properties and application of ultrasonic Lamb waves in Cd_XHg_1-XTe plates

Tkach V.N.
Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates

Ibragimov G.B.
Interface roughness induced intrasubband scattering in a quantum well under an electric field

Klimovskaya A.I., Grigor’ev N.N., Gule E.G., Dryha Yu.A., Litovchenko V.G.
Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/In_xGa_1-xAs/GaAs

Gorley P.M., Demych M.V., Makhniy V.P., Horvath Zs.J., Shenderovsky V.A.
Current flow mechanisms in p-i-n­ structures based on cadmium telluride

Tkachuk A.I., Tsarenko O.N., Ryabets S.I.
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb_0.935Sn_0.065Te_0.243Se_0.757/In Schottky barrier structures

Vlasenko N.A., Denisova Z.L., Kononets Ya.F., Veligura L.I., Chumachkova M.M., Tsyrkunov Yu.A., Soininen E.L. , Tornqvist R.O., Vasame K.M.
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior

Torchynska T.V., Polupan G.P.
III-V material solar cells for space application

Vlaskina S.I.
Silicon carbide LED

Budzulyak I.M., Kovalyuk Z.D., Motsnyi F.V., Orletskyi V.B.
Study of supercapacitors with a double electrical layer based on activated carbon materials

Haccart T., Cattan E., Remiens D.
Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation

Bravina S.L., Cattan E., Morozovsky N.V., Remiens D.
Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector

Boguslavska N.N., Venger E.F., Vernidub N.M., Pasechnik Yu.A., Shportko K.V.
Reststrahlen spectroscopy of MgAl₂O₄ spinel

Oberemok O., Lytvyn P.
Borophosphosilicate glass component analysis using secondary neutral mass spectrometry

Girnyk V.I., Kostyukevych S.O., Shepeliavyi P.Ye., Kononov A.V., Borisov I.S.
Multilevel computer-generated holograms for reconstructing 3-D images in combined optical-digital security devices

Rybalochka A., Sorokin V., Sorokin A.
Allowable deviation of LC layer thickness in cholesteric LCDs

Bushma A.V., Sukach G.A.
Static realization of reliable positional indication