Interface roughness induced intrasubband scattering in a quantum well under an electric field

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1
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dc.contributor.author	Ibragimov, G.B.
dc.date.accessioned	2017-06-07T12:25:29Z
dc.date.available	2017-06-07T12:25:29Z
dc.date.issued	2002
dc.identifier.citation	Interface roughness induced intrasubband scattering in a quantum well under an electric field / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 39-41. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 68.65,73.20.D
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119564
dc.description.abstract	Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering rate increases with increasing electric field. The electric field changes the interface roughness scattering rates drastically in thick QWs as compared with those for the zero-field case.	uk_UA
dc.description.sponsorship	The author would like to thank Prof. М.I. Aliev and Prof. F.М. Gashimzade for helpful discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Interface roughness induced intrasubband scattering in a quantum well under an electric field	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA