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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Allowable deviation of LC layer thickness in cholesteric LCDs 
    Rybalochka, A.; Sorokin, V.; Sorokin, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The deviation of liquid crystal (LC) layer thickness in a display cell has considerable influence on the image quality at the addressing of cholesteric liquid crystal displays (ChLCD) by different kind of dynamic drive ...
  • Atomic and electronic structure of a-SiC 
    Ivashchenko, V.I.; Shevchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide ...
  • Borophosphosilicate glass component analysis using secondary neutral mass spectrometry 
    Oberemok, O.; Lytvyn, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. ...
  • Current flow mechanisms in p-i-n­ structures based on cadmium telluride 
    Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation 
    Haccart, T.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Lead titanate zirconate Pb(Zr,Ti)O₃ (PZT) thin films were deposited on platinized silicon substrates by r.f. magnetron sputtering and crystallized with preferred (110) or (111) orientation by conventional annealing treatment. ...
  • Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates 
    Tkach, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates ...
  • Electronic band structure and magnetic susceptibility of Ge₁₋xSix solid solutions 
    Deibuk, V.G.; Shakhovtsova, S.I.; Shenderovski, V.A.; Tsmots, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The magnetic susceptibility (MS) of single crystal Ge₁-xSix (0 < x < 0.1) solid solutions was investigated. Considerable anomalous MS behavior was found. Theoretical estimations of paramagnetic and diamagnetic parts were ...
  • III-V material solar cells for space application 
    Torchynska, T.V.; Polupan, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments ...
  • Influence of g-irradiation on photoluminescence spectra of CdTe:Cl 
    Vakhnyak, N.D.; Krylyuk, S.G.; Kryuchenko, Yu.V.; Kupchak, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For ...
  • Instability of homogeneous composition of highly strained quantum wells in heterostructures GaAs/InxGa₁₋xAs/GaAs 
    Klimovskaya, A.I.; Grigor’ev, N.N.; Gule, E.G.; Dryha, Yu.A.; Litovchenko, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    InxGa₁-xAs QW-layers embedded in GaAs matrix have been characterized by photoluminescence (PL). The relation between the PL parameters and mismatch of the lattice parameters of the layer and matrix was established. In ...
  • Interface roughness induced intrasubband scattering in a quantum well under an electric field 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied normally to the layer plane. It is found that the interface roughness scattering ...
  • Multilevel computer-generated holograms for reconstructing 3-D images in combined optical-digital security devices 
    Girnyk, V.I.; Kostyukevych, S.O.; Shepeliavyi, P.Ye.; Kononov, A.V.; Borisov, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Computer-generated holograms (CGHs) integrated within combined optical-digital security devices (CO/DSDs) are described in this work. They can restore the monochrome and color 3D images in white light. To record them, the ...
  • On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior 
    Vlasenko, N.A.; Denisova, Z.L.; Kononets, Ya.F.; Veligura, L.I.; Chumachkova, M.M.; Tsyrkunov, Yu.A.; Soininen, E.L.; Tornqvist, R.O.; Vasame, K.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques ...
  • Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures 
    Tkachuk, A.I.; Tsarenko, O.N.; Ryabets, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth ...
  • Properties and application of ultrasonic Lamb waves in CdxHg₁₋xTe plates 
    Lysiuk, I.O.; Machulin, V.F.; Olikh, Ja.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Group and phase velocities of the lowest orders of Lamb waves in <100>, <110> directions for (100) Cd₀.₂Hg₀.₈Te plates are calculated. Frequency dispersion of a₀ and s₀ Lamb modes velocities were measured on (111)-plates ...
  • Reststrahlen spectroscopy of MgAl₂O₄ spinel 
    Boguslavska, N.N.; Venger, E.F.; Vernidub, N.M.; Pasechnik, Yu.A.; Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Using IR reflectance spectroscopy and surface polariton spectroscopy in the reststrahlen region, we investigated Czochralski-grown MgAl₂O₄ spinel. The computer analysis of variance made for spectra enabled us to get a ...
  • Silicon carbide LED 
    Vlaskina, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (in¬dicators, screens). The silicon carbide LED technology has been in¬vestigated for improvement of their ...
  • Static realization of reliable positional indication 
    Bushma, A.V.; Sukach, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The highly reliable position information model for optoelectronic display systems is offered. Logical operators that describe static formation of this model are obtained and analyzed. The main features of alphabets for two ...
  • Study of supercapacitors with a double electrical layer based on activated carbon materials 
    Budzulyak, I.M.; Kovalyuk, Z.D.; Motsnyi, F.V.; Orletskyi, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    It is proposed ecologically pure technology to obtain activated carbon. On the base of this carbon the supercapacitors were manufactured. Their characteristics were determined and compare with analogs obtained using ...
  • Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector 
    Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si ...

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