Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 2
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dc.contributor.author	Pyziak, L.
dc.contributor.author	Obermayr, W.
dc.contributor.author	Zembrowska, K.
dc.contributor.author	Kuzma, M.
dc.date.accessioned	2017-05-28T06:08:18Z
dc.date.available	2017-05-28T06:08:18Z
dc.date.issued	2003
dc.identifier.citation	Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations / L. Pyziak, W. Obermayr, K. Zembrowska, M. Kuzma // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 183-188. — Бібліогр.: 40 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 02.70.Uu, 61.43.Bn
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118014
dc.description.abstract	Fractal analysis was used for the description of the geometry of the clusters formed within the Monte Carlo simulation of the first monolayer growth on Si substrate. Pulse laser deposition method was assumed for the epitaxy. Layers were obtained for various substrate temperatures varying in the range from 600 K to 800 K. The topography of plane clusters formed were characterised by their fractal box-like dimension. The relation between this dimension and the shape of the clusters was addressed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Topography of Si epitaxial monolayers obtained on Si (001) substrate by computer simulations	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA