Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition

dc.contributor.author	Glinchuk, K.D.
dc.contributor.author	Litovchenko, N.M.
dc.contributor.author	Strilchuk, O.N.
dc.date.accessioned	2017-05-27T20:04:42Z
dc.date.available	2017-05-27T20:04:42Z
dc.date.issued	2003
dc.identifier.citation	Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 78.55. - m; 78.55. Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117989
dc.description.abstract	Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA