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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...
  • Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...
  • Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New data showing an inaccuracy of Kirchhoff's description for the diffraction of the limited aperture light beams are presented. A series of the known experimental facts, which did not have an unequivocal interpretation ...
  • Belyaeva, A.I.; Galuza, A.A.; Grebennik, T.G.; Yuriyev, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A multiple angle ellipsometric method is used for measurements of thin film layers on substrates. The method evaluates fundamental optical constants and thicknesses of the film layers. Dielectric functions of the surface ...
  • Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Davidenko, N.A.; Ishchenko, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The features of formation and relaxation of metastable connected states of cation-radical of carbazole and negatively charged fragment of dye molecule were investigated in the films of poly-N-epoxypropilcarbazole doped ...
  • Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...
  • Lysiuk, I.O.; Machulin, V.F.; Olikh, Ya.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The complete set of elastic moduli of Cd₀.₂Hg₀.₈Te was obtained. Taking into account elastic moduli found for Cd₀.₂Hg₀.₈Te and appropriate literary data for CdTe the anisotropy of velocities of volume and Rayleigh waves ...
  • Kosyachenko, L.A.; Rarenko, I.M.; Bodnaruk, O.O.; Frasunyak, V.M.; Sklyarchuk, V.M.; Sklyarchuk, Ye.F.; Sun Weiguo; Lu Zheng Xiong (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion ...
  • Mazur, Yu.I.; Tarasov, G.G.; Kuzmenko, E.V.; Belyaev, A.E.; Hoerstel, W.; Kraak, W.; Masselink, W.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic ...
  • Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N.; Kravetski, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs ...
  • Goncharenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the theory on the bounds, a general representation for effective conductivity of a two-phase composite is proposed. The representation contains two parameters that depend on the composite topology and can be determined ...
  • Barabash, Yu.M.; Zabolotny, M.A.; Sokolov, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Thermalization processes in photosensitive organic semiconductors are theoretically considered from the standpoint of their main parameters, namely: thermalization time and thermalization length. These are shown to be ...
  • Shcherbak, L.P.; Feichouk, P.I.; Plevachouk, Yu.A.; Kopach, O.V.; Turyanska, L.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A stepwise character of cadmium telluride melting is shown by using differential thermal analysis and conductivity measurements in the 1323 to 1473 K temperature range. According to the results of differential thermal ...
  • Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown ...
  • Finkelshtein, S.H.; Sorokin, V.M.; Rakitin, S.A.; Sevostyanov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    This paper is devoted to problems of gassing in vacuum fluorescent displays (VFD). Technique of qualitative and quantitative analysis of residual atmosphere in VFDs is presented. Also, dynamics of residual gas pressure ...
  • Dyadyusha, A.G.; Gvozdovsky, I.A.; Salkova, E.N.; Terenetskaya, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new approach to the problem of personal UV biodosimeter is described. Nematic liquid crystal (LC-805) is converted into induced cholesteric phase using photosensitive chiral dopant of steroid biomolecules (7-dehydrocholesterol ...

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