Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
→
Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 4
→
Переглянути статтю

Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes

Kosyachenko, L.A. ; Rarenko, I.M. ; Bodnaruk, O.O. ; Frasunyak, V.M. ; Sklyarchuk, V.M. ; Sklyarchuk, Ye.F. ; Sun Weiguo ; Lu Zheng Xiong

Інший ID: PACS: 71.28, 72.20.J, 78.40.F, 78.66

URI: http://dspace.nbuv.gov.ua/handle/123456789/120253

Посилання: Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes / L.A. Kosyachenko, I.M. Rarenko, O.O. Bodnaruk, V.M. Frasunyak, V.M. Sklyarchuk, Ye.F. Sklyarchuk, Sun Weiguo, Lu Zheng Xiong // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 4. — С. 31-36. — Бібліогр.: 14 назв. — англ.

Дата: 1999

Завантажень: 358

Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes

Анотація:

The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion temperature on the acceptor concentration and semiconductor bandgap are supported by calculations. The long-wavelength absorption edge is treated using the Kane model. The revealed features of the absorption are considered to be caused by small effective mass of electrons in the narrow-gap semiconductors studied. The diodes with p-n junctions produced by ion etching have good rectifying properties determined by carrier generation-recombination, tunneling and avalanche processes.

Показати повний запис статті