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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • AES and XPS characterization of TiN layers formed and modified by ion implantation 
    Melnik, V.; Popov, V.; Kruger, D.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy ...
  • Amplification of localized acoustic waves by the electron drift in a quantum well 
    Demidenko, A. A.; Kochelap, V. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses ...
  • Anisotropy of ultrasonic waves propagation velocities in CdHgTe/CdTe 
    Lysiuk, I.O.; Machulin, V.F.; Olikh, Ya.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The complete set of elastic moduli of Cd₀.₂Hg₀.₈Te was obtained. Taking into account elastic moduli found for Cd₀.₂Hg₀.₈Te and appropriate literary data for CdTe the anisotropy of velocities of volume and Rayleigh waves ...
  • Bipolarons in anisotropic crystals and low dimensional structures 
    Kashirina, N.I.; Mozdor, E.V.; Pashitskij, E.A.; Sheka, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We consider a simple bipolaron approach to description of anisotropic crystals in the strongcoupling limit. We have taken into account anisotropy of effective band masses and dielectric constants of crystals. The calculations ...
  • Characteristics of thermal lens induced in active rod of cw Nd:YAG laser 
    Khizhnyak, A.; Galich, G.; Lopiitchouk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The structure of thermal lens induced in active rod of cw Nd: YAG laser was investigated using the Mach-Zehnder interferometer and electronic speckle pattern interferometry (ESPI) system. It is shown that thermal lens has ...
  • Characterization of Hg₁₋xMnxTe single crystals and Hg₁₋xMnxTe -based photodiodes 
    Kosyachenko, L.A.; Rarenko, I.M.; Bodnaruk, O.O.; Frasunyak, V.M.; Sklyarchuk, V.M.; Sklyarchuk, Ye.F.; Sun Weiguo; Lu Zheng Xiong (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of electrical, Hall effect and optical absorption studies of Hg₁₋xMnxTe (x >> 0.1–0.2) single crystals in the temperature range 80 to 300 K are reported. The observed dependences of the Hall coefficient inversion ...
  • Chemical dissolution of indium arsenide in the Br₂-HBr solutions 
    Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N.; Kravetski, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The nature and kinetics of InAs chemical dissolution and chemical cutting, in the bromine solutions in hydrobromic acid have been investigated. It was shown that at low (up to 6 vol.%) bromine concentrations the InAs ...
  • Conductivity of a two-phase composite: An approach based on bounds 
    Goncharenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the theory on the bounds, a general representation for effective conductivity of a two-phase composite is proposed. The representation contains two parameters that depend on the composite topology and can be determined ...
  • Conversion efficiency in silicon solar cells with spatially non-uniform doping 
    Sachenko, A.V.; Prima, N.A.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown ...
  • Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties 
    Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown ...
  • Development of personal biodosimeter of UV radiation based on vitamin D photosynthesis in nematic liquid crystal matrix 
    Dyadyusha, A.G.; Gvozdovsky, I.A.; Salkova, E.N.; Terenetskaya, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new approach to the problem of personal UV biodosimeter is described. Nematic liquid crystal (LC-805) is converted into induced cholesteric phase using photosensitive chiral dopant of steroid biomolecules (7-dehydrocholesterol ...
  • Dissolution of indium arsenide in nitric solutions of the hydrobromic acid 
    Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs ...
  • Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals 
    Bogoboyashchiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds 
    Korsunskaya, N. E.; Markevich, I. V.; Dzhumaev, B. R.; Borkovskaya, L. V.; Sheinkman, M. K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated ...
  • Electro-physical properties of γ-exposed crystals of silicon and germanium 
    Dotsenko, Yu. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep ...
  • ENDOR study of irradiated tooth enamel 
    Ishchenko, S.; Vorona, I.; Okulov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    γ- and x-irradiated tooth enamel has been studied by EPR and ENDOR. Radiation-induced EPR spectrum of tooth enamel was found to be a superposition of signals with dominant contribution determined by CO₂- radicals. Two types ...
  • Evaluation of the efficiency of interband radiative recombination in high quality Si 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...

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