Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...
  • Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...
  • Features of conduction electrons motion in the field of coherent light beams 
    Semchuk, O.Yu.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Conduction electrons moving in a non-homogeneous field of coherent light beams (CLB) are investigated. It is shown that a conduction electron simultaneously takes part in two oscillations. More exactly, an electron oscillate ...
  • About influences of different actions on spectra of impurity photoluminescence in GaAs 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown ...
  • Characterization of «solar» multicrystalline silicon by local measurements 
    Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, O.V.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Descartes-Snell law of refraction with absorption 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation ...
  • Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them 
    Boltovets, N.S.; Voitsikhovskyi, D.I.; Konakova, R.V.; Milenin, V.V.; Makara, V.A.; Rudenko, O.V.; Mel’nichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface ...
  • New method of apertured electromagnetic field modeling 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and ...
  • Group delay investigation of N-order chirping mirrors 
    Lysak, V.V.; Sukhoivanov, I.A.; Petrov, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We present the numerical calculation of N-order chirping mirrors with chirping both high and low refractive index layers using the transfer matrix method. The group delay and group delay dispersion are investigated for ...
  • Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, V.O.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Behaviour of manganese impurity in β-ZnP₂ 
    Kakazej, M.; Kudin, A.; Pinkovs’ka, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure ...
  • Influence of phonon dispersion on exciton damping in ionic crystals 
    Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The manifestation of phonon dispersion on frequency and temperature dependence of exciton damping is investigated theoretically for the models of crystal with the large and small exciton radii. The correlation between the ...
  • Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration 
    Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the ...
  • Microwave-induced optical non-linearity of amino acid crystals 
    Berezhinsky, L.I.; Dovbeshko, G.I.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Changes (ΔR) of amino acid crystals infrared (IR) reflectance (R) induced by simultaneous irradiation of IR and microwaves (MW) or extremely high frequency (EHF) radiation have been observed. It was shown that under the ...
  • Investigations of impurity gettering in multicrystalline silicon 
    Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors 
    Baranskii, P.I.; Babich, V.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис