Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
About influences of different actions on spectra of impurity photoluminescence in GaAs
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
About influences of different actions on spectra of impurity photoluminescence in GaAs
Інший ID:
PACS: 71.55.E, 78.55.E
Посилання:
About influences of different actions on spectra of impurity photoluminescence in GaAs / N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 3. — С. 168-170. — Бібліогр.: 12 назв. — англ.
Дата:
2001
Переглядів:
820
Завантажень:
397
Анотація:
Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same.
