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Influence of phonon dispersion on exciton damping in ionic crystals
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4
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Influence of phonon dispersion on exciton damping in ionic crystals
Інший ID:
PACS: 71.35.-y; 71.36.+c; 78.20.-e
Посилання:
Influence of phonon dispersion on exciton damping in ionic crystals / N.I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 323-330. — Бібліогр.: 23 назв. — англ.
Підтримка:
The author expresses gratitude to Profs М.P. Lysytsja, М.Уa. Valakh and Dr А.М. Уaremko for helpful discussions of the work results.
Дата:
2001
Переглядів:
710
Завантажень:
314
Анотація:
The manifestation of phonon dispersion on frequency and temperature dependence of exciton damping is investigated theoretically for the models of crystal with the large and small exciton radii. The correlation between the dispersion and the frequency intervals with phonon absorption and emission is discussed for the exciton of TlBr, ZnS and some other crystals as examples. It is demonstrated that depending on frequency the dispersion results both in increase and reduction of the exciton damping. In addition, the intensity of exciton damping close to the peaks of phonon absorption and emission is varied. The change of the tendency of influence of dispersion on damping for some fixed frequency with temperature growing is noticed.
