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Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1
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Influence of g-irradiation on photoluminescence spectra of CdTe:Cl
Інший ID:
PACS: 78.55.Et; 78.55.-m
Посилання:
Influence of g-irradiation on photoluminescence spectra of CdTe:Cl / N.D. Vakhnyak, S.G. Krylyuk, Yu.V. Kryuchenko, I.M. Kupchak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 25-30. — Бібліогр.: 31 назв. — англ.
Підтримка:
We wish to express our gratitude to О. P. Shakhov (lnstitute of Physics, NASU) for irradiation of CdTe samples and to О. l. Vlasenko and A.Baidulaeva (lnstitute of Semiconductor Physics, NASU) for stimulating discussions.
Дата:
2002
Переглядів:
691
Завантажень:
341
Анотація:
Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For larger doses of g-irradiation both a decrease of the total luminescence intensity and the intensity redistribution between the lines of excitons bound to different acceptors occur. For the donor-acceptor recombination with A-centers participation, an increase of the Huang-Rhys factor S is found with D increase. This fact can be explained by decrease of the A-centers concentration. The experimentally determined S values are compared with a calculated S(R) dependence for different distances R between donors and acceptors.
