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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures 
    Olikh, O.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated ...
  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Atomic defects and physical-chemical properties of PbTe-InTe solid solutions 
    Freik, D.M.; Boychuk, V.I.; Mezhylovsjka, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain ...
  • Classification of microdefects in semiconducting silicon 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a ...
  • Distortion compensation technique for high resolution microscopy 
    Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper represents the technique for distortion compensation in digital images from high resolution optical microscopes. This technique is based on approximation of necessary pixel shifts as a power function that can be ...
  • Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure 
    Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ ...
  • Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate 
    Kaganovich, E.B.; Kizyak, I.M.; Kirillova, S.I.; Konakova, R.V.; Lytvyn, O.S.; Lytvyn, P.M.; Manoilov, E.G.; Primachenko, V.E.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology ...
  • High-temperature injection spectroscopy of deep traps in CdTe polycrystalline films 
    Opanasyuk, A.S.; Opanasyuk, N.N.; Tirkusova, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper provides the direct experimental method to determine the localized state energy distribution function for semiconducting solid materials based on space-charge-limited current-voltage characteristics. The ...
  • Influence of elastic deformation on the residual ellipticity of polished optical materials 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, there are no data upon investigations of influence of elastic deformations on parameters of reflected polarised light in the ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Multilayer antireflection coatings have been modeled in visible and IR (3-5μm) bands to reduce reflectance from glass, germanium (Ge), silicon (Si) and zinc selenide (ZnSe) substrates. The transmittance of bare glass ...
  • On the origin of 300 K near-band-edge luminescence in CdTe 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in ...
  • Optical properties of ZnO aggregates in KBr matrix 
    Samah, M.; Bouguerra, M.; Khelfane, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Zinc oxide nanocrystals were prepared, using Czochralski method of growth, in KBr matrix during pulling. Good evidences can prove that the quantum confinement effect is the special quality for this nanosystem. As an ...
  • Polymer films as sensitive coatings for quartz crystal microbalance sensors array 
    Koshets, I.A.; Kazantseva, Z.I.; Shirshov, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work reports on the results of investigation of quarts crystal microbalance sensors coated with polybutyl methacrylate and polyvinyl formal/ethylal to wide range of volatile organic compounds. Polymer film coated ...
  • Stress-induced effects in light scattering by plasmons in p-type germanium 
    Poroshin, V.N.; Gaydar, A.V.; Abramov, A.A.; Tulupenko, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal ...
  • Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells 
    Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties ...
  • Structure and luminescence study of nanoporous silicon layers with high internal surface 
    Makara, V.A.; Melnichenko, M.M.; Svezhentsova, K.V.; Khomenkova, L.Yu.; Shmyryeva, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were ...
  • Study of gamma field induced degradation of green GaP light diode electroluminescence characteristics 
    Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ja.; Tartachnyk, V.P.; Pinkovs'ka, M.B.; Shakhov, O.P.; Shapar, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Optical and electrical properties of green GaP light diode irradiated by gammairradiation have been studied. Long-lasting relaxation processes on electroluminescence curve of diodes had been observed which one could connect ...
  • Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds 
    Manam, J.; Sharma, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound ...

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