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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • The energy structure of free electrons for semiconductor in the field of cylindrical symmetry 
    Stakhira, J.M.; Stakhira, R.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The energetic structure of semiconductor free electrons in the field of cylindrical symmetry whose radial part is a sum of two components, which depend on radial coordinate according to quadratic and biquadratic laws has ...
  • Theory of the free-carrier absorption in quantum wires with boundary roughness scattering 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A theory of free carrier absorption is given for quantum wires when carriers are scattered by boundary roughness and the radiation field is polarized along the length of the wire. The free-carrier absorption coefficient ...
  • High-temperature configurations of dimers in Si (001) surface layers 
    Kiv, A.E.; Maksymova, T.I.; Moiseenko, N.V.; Soloviev, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • High-power low-frequency current oscillations in germanium samples 
    Pavljuk, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Experimental investigation of high-power low-frequency current oscillations in germanium samples with low injecting contacts is discussed in this article. The results obtained were explained by periodic formation, transport ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Phase equilibria in Cd-Hg-Te system are analyzed in the framework of the polyassociative solution model. Checking the mentioned model applicability to description of phase equilibria and search of system thermodynamical ...
  • Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry 
    Ammerlaan, C.A.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Numerical calculations are presented for the energy levels of the rare-earth ion Er³⁺ in a crystalline field of cubic symmetry. A distinction is made between the five different point groups within the system of cubic ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Determination of surface parameters of solids by methods of X-ray total external reflection 
    Balovsyak, S.V.; Fodchuk, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • High-resistance low-doped GaAs and AlGaAs layers obtained by LPE 
    Krukovsky, S.I.; Zayachuk, D.M.; Rybak, O.V.; Mryhin, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Influence of Yb and Al co-doping gallium melt during LPE growth of the GaAs epitaxial layers on their properties is investigated. It is shown that both morphology and electrophysical parameters of the films are changed ...
  • Electron emission modulation effects in micro-size structures 
    Hartnagel, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A promising application of field-emission phenomena is microwave high-frequency oscillation generation. In this presentation, new effects at the field emission, as a perspective mechanism of high-frequency oscillation ...
  • Electrical activity of misfit dislocations in GaAs-based heterostructures 
    Wosinski, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Electrical properties of lattice-mismatch induced defects in GaAs/InGaAs and GaAs/GaAsSb heterostructures have been studied by means of electron-beam induced current (EBIC) in a scanning electron microscope and deep-level ...
  • Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition 
    Andriyevsky, B.V.; Romanyuk, M.O.; Dumka, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependences of the linear dimension L(T) and the optical path difference D(T) of the ferroelectric diglycine nitrate crystals, (NH₂CH₂COOH)₂ HNO₃, have been measured for three principal directions of optical ...
  • Diffusion and mobility of native point defects in narrow-gap Hg₁-xCdxTe crystals 
    Elizarov, A.I.; Kurbanov, K.R.; Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Results of investigations of mercury vacancy diffusion in the narrow-gap Hg₁-xCdxTe crystals are presented. A new theory for mercury diffusion in a gradient of native defect concentration is proposed. The theory takes into ...
  • The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction ...
  • An arithmetic logic unit of a computer based on single electron transport system 
    Biswas, A.K.; Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A simple two-way switching can be modified utilizing optical switching, electron-wave modulation and single-electron transport. In this work an arithmetic-logic unit is designed by employing single-electron Binary Decision ...
  • Electron field emission from SiOx films 
    Evtukh, А.А.; Indutnyy, I.Z.; Lisovskyy, I.P.; Litvin, Yu.M.; Litovchenko, V.G.; Lytvyn, P.M.; Mazunov, D.O.; Rassamakin, Yu.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Efficient electron field emission from silicon flat cathode coated with SiOx film (x 0.3-0.5) was observed both before and after thermal (1000 °C) annealing with subsequent etching in HF solution. Oxide films were produced ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • Electric and dielectric properties of glasses of Cu-Sb-S-I system 
    Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    D.c. and a.c. conductivity (d(0) and d(w )) and dielectric parameters (d and tgd ) of Cu-Sb-S-I system glasses are investigated in 1.0*10⁴ - 6.0*10⁷ Hz frequency range and 170-400 K temperature interval. In the glasses of ...
  • Origin of surface layer on common substrates for functional material films probed by ellipsometry 
    Belyaeva, A.I.; Galuza, A.A.; Kudlenko, A.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates ...

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