Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Результати 103-105 з 105

Ultrasound influence on exciton emission of GaP light diodes

Gontaruk, O.M.; Khivrych, V.I.; Pinkovska, M.B.; Tartachnyk, V.P.; Olikh, Ya.M.; Vernydub, R.M.; Opilat, V.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Electroluminescence of GaP light diodes, treated by ultrasound at room and low temperatures has been studied. It has been found that short ultrasound caused improvement of red diode emission characteristics while ...
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals

Bochkova, T.M.; Plyaka, S.N.; Sokolyanskii, G.Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction ...
Vacuum method for creation of liquid crystal orienting microrelief

Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

A mechanism for creation of microrelief surface anisotropy of amorphous films oxides materials which are obtained by oblique reactive cathode sputtering method is described. The influence of technological parameters of ...

Результати 103-105 з 105

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