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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6 за назвою

Сортувати за: Порядок: Результатів:

  • Injection currents in lamellar crystals of gallium telluride 
    Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Investigation of some mechanisms for formation of exciton absorption bands in layered semiconductor n-InSe and p-GaSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that processes of creation, radiation and decay of the ground (n = 1) and excited exciton states in layered n-InSe and p-GaSe crystals involve direct (photon -> exciton -> photon, at k = 0), as well as indirect ...
  • Investigation of superlattice structure parameters using quasi-forbidden reflections 
    Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
  • Investigation of the optical and acoustical phonon modes in Si₁₋xGex QD SLs 
    Dzhagan, V.N.; Krasil'nik, Z.F.; Lytvyn, P.M.; Novikov, A.V.; Valakh, M.Ya.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Single- and multilayer structures with Si₁₋xGex nanoislands have been investigated using the Raman scattering technique. The values of the mechanical strain and composition were determined in the islands of the both ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Ion induced field effect in silicon in nematic liquid crystal cell 
    Kucheev, S.I.; Gritsenko, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An influence of ion charge on surface conductivity of silicon in In₂O₃/5CB/monocrystal silicon/Al structure, in which a specific resistance of silicon is much less than a specific resistance of liquid crystal layer, was ...
  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • Many particle and bandstructure effects in intersubband quantum well optics 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions 
    Kovalyuk, Z.D.; Makhniy, V.P.; Yanchuk, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes ...
  • Metastable interstitials in CdSe and CdS crystals 
    Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Korsunska, N.O.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An "anomalous" defect drift in external electric field, namely, transport of acceptorlike centres from the anode to the cathode, has been observed in CdS:Cu, CdS:Ag and nominally undoped CdSe crystals at 350-700 K. The ...
  • Modeling high performance multilayer antireflection coatings for visible and infrared (3-5μm) substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Multilayer antireflection coatings have been modeled in visible and IR (3-5μm) bands to reduce reflectance from glass, germanium (Ge), silicon (Si) and zinc selenide (ZnSe) substrates. The transmittance of bare glass ...
  • New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET 
    Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • Noise-induced escape flux on time-scales preceding quasistationarity 
    Soskin, S.M.; Sheka, V.I.; Linnik, T.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Noise-induced escape from the metastable part of potential is considered on time scales preceding the formation of quasiequilibrium within that part of the potential. It is shown that, counterintuitively, the escape flux ...
  • Non-uniformity of cross-beam laser power distribution as a source of errors in non-linear spectroscopy 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We investigated errors arising in calculations of optical signals in non-linear laser spectroscopy due to neglection of non-uniformity in cross-beam laser power distribution. The following three cases of non-linear emission ...
  • One-dimensional warm electron transport in GaN quantum well wires at low temperatures 
    Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    One-dimensional warm electron coefficient (β) and Ohmic mobility μ₀ in a square quantum well wire of GaN are studied for lattice temperatures in the range of 4-10 K, which are important from the application point of view. ...
  • On the origin of 300 K near-band-edge luminescence in CdTe 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in ...
  • On thermal emission of small-sized radiator 
    Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Principle feasibility has been considered for a distant identification of a small-sized thermal radiator by means of detecting its thermal radiation. A single small-size radiator is phenomenologically treated within the ...
  • Optical characteristics of Al₂O₃ oxide coatings on copper mirrors made by diamond microgrinding 
    Odarich, V.A.; Poperenko, L.V.; Staschuk, V.S.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Ellipsomety examination of dielectric sheetings and measured of reflection spectrum at normal incidence there carried out. A film of Al₂O₃ on a surface of copper mirrors of a diamond microgrinding was deposited. The thickness ...
  • Optical characterization of thin Au films by standard and polaritonic ellipsometry 
    Dmitruk, N.L.; Fursenko, O.V.; Kondratenko, O.S.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work is aimed at optical characterization of thin Au films by multiple-angle-of-incidence reflectance ellipsometry at the fixed wavelength (632.8 nm) in standard and attenuated total reflection (ATR) modes in contact ...

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