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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Active region of CdTe X-/γ-ray detector with Schottky diode 
    Kosyachenko, L.A.; Maslyanchuk, O.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the ...
  • Amphoteric center of luminescence in CdS 
    Artem'jeva, O. O.; Vakulenko, O. V.; Dacenko, O. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV ...
  • Basic peculiarities of energy band spectra within generalized kindal's model for semiconductors with one main axis 
    Chuiko, G.P.; Martyniuk, V.V.; Bazhenov, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The analysis of the basic features of the generalized Kildal model had been presented for the semiconductors without the center of symmetry and with one main crystal axis. It had been proved, that the Kramers’ degeneration ...
  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Effect of non-linear absorption on characteristics of laser-induced luminescence 
    Zelensky, S.E.; Okhrimenko, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper deals with the methodology of laser-induced luminescence at high excitation levels. For a case when a photodetector collects integral (over the volume) luminescence power, a method is proposed for processing the ...
  • Inversion asymmetry effect on quantum oscillations in 3-D crystals with Cnv symmetry 
    Ivchenko, V.V.; Sergeev, A.N.; Elnik, V.S.; Chuiko, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The peculiarities of quantum oscillations in bulk semiconductors with Cnv symmetry caused by the lack of their symmetry centre are considered. A quasi-qubic model is used for finding the magnetic levels. The algorithm for ...
  • Investigation of Al-ZERODUR interface by Raman and secondary ion mass spectroscopy 
    Berezhinsky, L.I.; Yukhymchuk, V.A.; Maslov, V.P.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The interface of ZERODUR ceramics and thin aluminium film was investigated by Raman and secondary ion mass-spectroscopy techniques. Possible chemical reactions at the interface is briefly analyzed and compared with ...
  • Method for replacing objects in 4F correlator: testing 
    Yezhov, P.V.; Kuzmenko, A.V.; Smirnova, Т.N.; Ivanovskyy, A. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The method of pattern recognition based on replacement of object images incoming to the correlator by object-dependent synthesized phase objects calculated using the iterative Fourier-transform algorithm was developed by ...
  • Parametrized Equations for Excitons in Quantum Wires 
    El Haddad, A.; Diouri, J.; Taqi, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and phase equilibrium in Cd-Hg-Te system: 3. Optimization of the thermodynamical functions of the model and quasi-binary structural diagram of Cd-Hg-Te system 
    P.P., Moskvin; L.V., Rashkovetskiy; A.V., Stronski (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frames of the model of the polyassociative solutions the comparative analysis was performed of the formation parameters of multi-atom complexes in CdTe and Hg-Te systems. It was shown, that thermodynamical ...
  • Radiation power spectral distribution of two electrons moving in magnetic fields 
    Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Revealing the hopping mechanism of conduction in heavily doped silicon diodes 
    Borblik, V. L.; Shwarts, Yu. M.; Shwarts, M. M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, ...
  • Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality 
    Tovstyuk, N.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. ...
  • Screen-printed p-CdTe layers for CdS/CdTe solar cells 
    Klad'ko, V.P.; Lytvyn, P.M.; Osipyonok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes ...
  • Spontaneous and Stimulated Emission Spectra for the Molecule ¹²⁴Xe³⁵Cl. 
    Zubrilin, N.G.; Osypov, S.I.; Pavlov, I.A.; Chernomorets., M.P.; Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The influence of the isotopic composition of active medium on a lasing spectrum of a XeCl laser has been investigated. Spectra of spontaneous and stimulated emissions for monoisotopic ¹²⁴Xe³⁵Cl molecules were measured. The ...
  • The role of optical phonons in electrons heating by IR radiation in Ge 
    Poroshin, V.N.; Sarbey, O.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration ...

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