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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • LC acousto-optical transducer for nondestructive holographic control systems 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R.; Tytarenko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The construction of acousto-optical display based on the hysteretic in cholesteric liquid crystals (CLCs) is proposed for nondestructive holographic test systems. The influence oblique reactive sputtering deposited thin ...
  • Light absorption by inhomogeneous semiconductor film 
    Baraban, L.; Lozovski, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different ...
  • Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions 
    Deibuk, V.G.; Korolyuk, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. ...
  • Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation ...
  • Method for replacing objects in 4F correlator: testing 
    Yezhov, P.V.; Kuzmenko, A.V.; Smirnova, Т.N.; Ivanovskyy, A. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The method of pattern recognition based on replacement of object images incoming to the correlator by object-dependent synthesized phase objects calculated using the iterative Fourier-transform algorithm was developed by ...
  • Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment 
    Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
  • Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr 
    Vlasenko, N.A.; Belyaev, A.E.; Denisova, Z.L.; Kononets, Ya.F.; Komarov, A.V.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ...
  • Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation ...
  • Multifunctional devices based on induced polar states 
    Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Search for new pyroactive effective materials with controlled polarization properties is carried out with the goal of developing the new generation of pyroelectric sensors with extended functional capabilities. Elaborated ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron ...
  • Novel SnO₂ based optical sensor for detectin of low ammonia concentration in water at room temperatures 
    Pisco, M.; Consales, M.; Viter, R.; Smyntyna, V.; Campopiano, S.; Giordano, M.; Cusano, A.; Cutolo, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the work, presented are preliminary experimental results on the capability of a metal oxide (MO) based optical sensor to perform ammonia detection in water environment at room temperature. The electro-spray pyrolysis ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Optical properties of p-type porous GaAs 
    Kidalov, V.V.; Beji, L.; Sukach, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. ...
  • Parametrized Equations for Excitons in Quantum Wires 
    El Haddad, A.; Diouri, J.; Taqi, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A set of analytic equations for calculating the binding energies of excitons in T-shaped and squared quantum well wires are established within the effective mass approximation and the two-band model. The resolution is ...
  • Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction 
    Karimov, A.V.; Yodgorova, D.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different ...
  • Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers 
    Koval'chuk, A.V.; Shevchuk, A.F.; Naiko, D.A.; Koval'chuk, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ...
  • Photovoltaic and optical properties of a polymer - PbS nanocomposite 
    Lutsyk, P.; Dzura, L.; Kutsenko, A.; Vertsimakha, Ya.; Sworakowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Photovoltaic and optical properties of a polymer-PbS nanoparticles in polyvinyl alcohol (PVA) films and the effect of annealing in air at various temperatures on these properties are studied in this work. In the range of ...
  • Physico-Chemical model and computer simulations of silicon nanowire growth 
    Efremov, A.; Klimovskaya, A.; Kamins, T.; Shanina, B.; Grygoryev, K .; Lukyanets, S . (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas ...
  • p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy 
    Sapaev, B.; Saidov, A.S.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the ...

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