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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за датою випуску

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за датою випуску

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Local atomic structures in Si₁₋xGex and Si₁₋xSnx random solid solutions

Deibuk, V.G.; Korolyuk, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Using molecular-dynamics method based on three-particle Tersoff’s potential simulation we have studied the Si₁₋xGex and Si₁₋xSnx random solid solutions. Bond lengths and strain energies of these alloys can be predicted. ...
Spin ballistic transport and quantum intreference in mesoscopic loop structures

Tralle, I.; Pasko, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

In the paper, a simple theory of quantum inteference in a loop structure caused by spin coherent transport and the Larmor precession of the electron spin is presented. A “spin ballistic” regime is supposed to occur, when ...
Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr

Vlasenko, N.A.; Belyaev, A.E.; Denisova, Z.L.; Kononets, Ya.F.; Komarov, A.V.; Veligura, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

A structureless emission in the visible region was revealed in ZnS:Cr thin-film electroluminescent structures (TFELS) apart the main near-infrared emission resulted from the 5E → 5T2 transition in the 3d shell of the Cr²⁺ ...
Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-CdxHg₁₋xTe

Izhnin, I.I.; Bogoboyashchyy, V.V.; Kurbanov, K.R.; Mynbaev, K.D.; Ryabikov, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The dependence of the conversion depth in CdxHg₁–xTe alloys subjected to ion-beam milling (CMT) on alloy composition and treatment temperature is studied both experimentally and theoretically. It is shown that in compositionally ...
Multifunctional devices based on induced polar states

Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Search for new pyroactive effective materials with controlled polarization properties is carried out with the goal of developing the new generation of pyroelectric sensors with extended functional capabilities. Elaborated ...
Analysis of radiation patterns of rectangular microstrip antennas with uniform substrate

Boualleg, A.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Microstrip antennas are useful as antennas mounted on moving vehicles such as cars, planes, rockets, or satellites, because of their small size, light weight and low profile. Since its introduction in 1985, the features ...
Physico-Chemical model and computer simulations of silicon nanowire growth

Efremov, A.; Klimovskaya, A.; Kamins, T.; Shanina, B.; Grygoryev, K .; Lukyanets, S . (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas ...
The nature of red emission in porous silicon

Khomenkova, L.Yu.; Korsunska, N.E.; Bulakh, B.M.; Sheinkman, M.K.; Stara, T.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was ...
Theory of two-dimensional photonic crystals with lamellar cylindrical pores

Glushko, A.E.; Glushko, E.Ya.; Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Theoretical investigation of 2D photonic crystals containing intermediate layers on the surface of cylindrical pores is performed within the framework of the plane-wave model. We have analyzed how the third medium introduction ...
Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces

Dmitruk, N.L.; Borkovskaya, O.Yu.; Kostylyov, V.E.; Sachenko, A.V.; Sokolovskiy, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit ...
Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction

Karimov, A.V.; Yodgorova, D.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Given in this work are the results of studying the process of creation of diffusion and epitaxial layers in microrelief structures. It has been shown that photoconverting structures with a microrelief interface were different ...
Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions

Hodovaniouk, V.M.; Doktorovych, I.V.; Butenko, V.K.; Yuryev, V.H.; Dobrovolsky, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the ...
Synthesis of highly doped Nd:YAG powder by the SOL-GEL method

Hajiesmaeilbaigi, F.; Farmahini, M. F.; Hasani, J.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The sol-gel method was used for synthesizing Nd:YAG powder. The process contains several steps, for example solving in acid, mixing, evaporation etc. The XRD analysis of prepared powder by sol-gel method showed that the ...
Novel SnO₂ based optical sensor for detectin of low ammonia concentration in water at room temperatures

Pisco, M.; Consales, M.; Viter, R.; Smyntyna, V.; Campopiano, S.; Giordano, M.; Cusano, A.; Cutolo, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

In the work, presented are preliminary experimental results on the capability of a metal oxide (MO) based optical sensor to perform ammonia detection in water environment at room temperature. The electro-spray pyrolysis ...
Filter for TV and video cameras

Berezhinsky, L.I.; Dae-Yong Park; Chang-Min Sung; Kwang-Ho Kwon; Sang-Hoon Chai (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter ...
Investigation of the physical properties of multi-component solid solutions Hg₁₋x₋y₋zAxByCzTe

Ostapov, S.E.; Gorbatyuk, I.N.; Zhikharevich, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

This paper presents theoretical research on the basic band parameters and galvanomagnetic phenomena in multicomponent solid solutions Hg₁₋x₋yAxByCzTe, Hg₁₋x₋zCdxZnzTe and Hg₁₋x₋y₋zAxByCzTe, resulting in the empirical ...
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study

Strelchuk, V.V.; Kladko, V.P.; Yefanov, O.M.; Kolomys, O.F.; Gudymenko, O.I.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Using the method of high-resolution X-ray diffraction (HRXRD), we have studied 17-period In₀.₃Ga₀.₇As/GaAs multilayer structure with self-assembled quantum wires (QWRs) grown by the MBE and subjected to postgrowth rapid ...
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
Application of method of projective representations to the analysis of exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP₂ and CdP₂

Koryakov, S.V.; Gubanov, V.O.; Biliy, M.M.; Slobodyanyuk, O.V.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

The projective representations of the wavevector group were applied to the analysis of exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP₂ and CdP₂. Selection rules for indirect transitions were derived. ...

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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за датою випуску

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