Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • Excitons and trions in spherical semiconductor quantum dots 
    Kupchak, I.M.; Kryuchenko, Yu.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. ...
  • Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Influence of strains that appear in GaSb/InAs heterosystem on heteroepitaxial layer planarity is considered. It is shown that minimal supercooling of solution-melt at the saturation temperature of gallium antimonide in ...
  • Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films 
    Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Noise induced re-entrant transitions in exciton bistable system 
    Gudyma, Yu.; Ivans'kii, B.; Semenko, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We study a re-entrant transition in an exciton bistable system under the influence of multiplicative noise. The re-entrant behavior is predictable for specific values of the system control parameter when increasing the ...
  • Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films 
    Morozovska, A.N.; Eliseev, E.A.; Remiens, D.; Soyer, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We have modified the Landau-Khalatnikov approach and shown that the pyroelectric response of inhomogeneous ferroelectric-semiconductor films can be described using six coupled equations for six order parameters: average ...
  • Diamond microcrystallites formation through the phase transition graphite→liquid→diamond 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The paper presents the results of synthesizing the diamond microparticles (3 to 5 µm) in a spark discharge in hydrogen at the low pressure (100 Torr). The obtained growth rate ~5 µm/s is uniquely high. Our analysis of the ...
  • Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect 
    Gorley, P.M.; Horley, P.P.; Chupyra, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the ...
  • Microwave irradiation of gallium arsenide 
    Red'ko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    To study an influence of the microwave irradiation on a spectrum of defect states in semiconductor compound GaAs, we used measurements of luminescence spectra within the range 0.5 to 2.04 eV at 77 К before and after long ...
  • Investigation of the effective mass of electrons in solid solutions Hg₁₋x₋y₋zAxByCzTe 
    Ostapov, S.E.; Zhikharevich, V.V.; Deibuk, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper presents theoretical investigation on the influence of manganese and zinc in solid solutions of Hg₁₋x₋y₋zAxByCzTe on changes in the electron effective mass.
  • Photoresponse in Ge/Si nanostructures with quantum dots 
    Nikolenko, A.S.; Kondratenko, S.V.; Vakulenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed ...
  • Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group 
    Vlasov, A.P.; Bonchyk, A.Yu.; Fodchuk, I.M.; Barcz, A.; Swiatek, Z.T.; Zaplitnyy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the ...
  • An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications 
    Houk, Yu.; Iniguez, B.; Flandre, D.; Nazarov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite ...
  • Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry 
    Odarych, V.A.; Sarsembaeva, A.Z.; Vuichyk, M.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and ...
  • New fast-relaxed liquid crystal materials for optical communication networks 
    Garbovskiy, Yu.; Sadovenko, A.; Koval'chuk, A.; Klimusheva, G.; Bugaychuk, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Recording the dynamic holograms with microsecond relaxation times under action of laser pulses was obtained in composites based on the novel class of liquid crystals (LC), namely in ionic metal-alkanoates. Holographic ...
  • Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials 
    Denbnovetsky, S.V.; Slobodyan, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the work, non-destructive testing the Si and Ge semiconductors by pulse X-ray sources is discussed. Mathematical simulation of the radiation generation in reflection and transmission anode tubes is performed. Details ...
  • Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents 
    Gorishnyi, M.P.; Shevchuk, A.F.; Manzhara, V.S.; Koval'chuk, A.V.; Koval'chuk, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes of two types K1 and K2 in a series of isotropic solvents were studied. It was shown that the photoluminescent spectra depend both on nature ...
  • Dynamic electrophysical characterization of porous silicon humidity sensing 
    Bravina, S.; Morozovsky, N.; Boukroub, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The results of the investigation of changes of parameters of bipolar and unipolar dynamic current-voltage characteristics and transient currents as well as dynamic bipolar charge-voltage loops connected with the pulse ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис