ЗМІСТ

Kupchak I.M., Kryuchenko Yu.V., Korbutyak D.V.
Excitons and trions in spherical semiconductor quantum dots

Indutnyy I.Z., Lysenko V.S., Min'ko V.I., Nazarov A.N., Tkachenko A.S., Shepeliavyi P.E., Dan'ko V.A., Maidanchuk I.Yu.
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO_x films

Morozovska A.N., Eliseev E.A., Remiens D., Soyer C.
Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films

Semikina T.V.
Diamond microcrystallites formation through the phase transition graphite→liquid→diamond

Ostapov S.E., Zhikharevich V.V., Deibuk V.G.
Investigation of the effective mass of electrons in solid solutions Hg_1-x-y-zA_xB_yC_zTe

Nikolenko A.S., Kondratenko S.V., Vakulenko O.V.
Photoresponse in Ge/Si nanostructures with quantum dots

Vlasov A.P., Bonchyk A.Yu., Fodchuk I.M., Barcz A., Swiatek Z.T., Zaplitnyy R.A.
Solid state doping of Cd_xHg_1-xTe epitaxial layers with elements of V group

Houk Yu., Iniguez B., Flandre D., Nazarov A.
An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications

Odarych V.A., Sarsembaeva A.Z., Vuichyk M.V., Sizov F.F.
Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry

Garbovskiy Yu., Sadovenko A., Koval'chuk A., Klimusheva G., Bugaychuk S.
New fast-relaxed liquid crystal materials for optical communication networks

Denbnovetsky S.V., Slobodyan N.V.
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials

Gorishnyi M.P., Shevchuk A.F., Manzhara V.S., Koval'chuk A.V., Koval'chuk T.N.
Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents

Bravina S., Morozovsky N., Boukroub R.
Dynamic electrophysical characterization of porous silicon humidity sensing

Shutov S.V., Baganov Ye.A.
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase

Gudyma Yu., Ivans'kii B., Semenko O.
Noise induced re-entrant transitions in exciton bistable system

Gorley P.M., Horley P.P., Chupyra S.M.
Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect

Red'ko R.
Microwave irradiation of gallium arsenide