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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4
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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4 за назвою

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4 за назвою

Результати 1-16 з 16

Author Index 2008

Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
Dielectric studies of dispersions of carbon nanotubes in liquid crystal 5CB

Koval'chuk, A.; Dolgov, L.; Yaroshchuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The frequency dependences of the imaginary ε″ and real ε′ parts of complex dielectric permittivity inherent to planarly aligned layers of nematic liquid crystals 5CB doped with multiwalled carbon nanotubes (CNT) were ...
Effect of La³⁺ ions on the habit of KDP crystals

Javidi, S.; Esmaeil Nia; Aliakbari, N.; Taheri, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

A few KDP (KH2PO4) and KDP: La³⁺ (LaCl₃) single crystals were grown being based on the temperature reduction method. Investigations show that the presence of three valent ions like La³⁺ could be a cause of retarded growth ...
Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO₂ matrix

Khatsevich, I.; Melnik, V.; Popov, V.; Romanyuk, B.; Fedulov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The results of experimental researches of photoluminescence (PL) spectra in Si nanocluster structures obtained by implantation of silicon ions to SiO₂-Si structures with high-temperature (1100 °C) and following low-temperature ...
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
Factor of interfacial potential for the surface plasmon-polariton resonance sensor response

Lopatynskyi, A.M.; Lopatynska, O.G.; Poperenko, L.V.; Chegel, V.I.; Guiver, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this work, we investigate how the application of an external potential difference to the sensitive gold-electrolyte interface influences the optical response of a sensor based on the surface plasmon-polariton resonance ...
Features of the super prism effect in multilayer dielectric coatings

Pervak, Yu.A.; Onitchuk, V.M.; Pervak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

We demonstrate that the strong change of reflected beam intensity in the spectral range of the super-prism effect not allow to use periodic multilayer coatings as effective wavelength division multiplexing devices. But ...
Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon

Hasanov, H.A.; Murguzov, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is ...
Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

Nazarov, A.N.; Gomeniuk, Y.V.; Gomeniuk, Y.Y.; Lysenko, V.S.; Gottlob, H.D.B.; Schmidt, M.; Lemme, M.C.; Czernohorsky, M.; Ostenc, H.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Charge trapping in ultrathin high-k Gd₂O₃ dielectric leading to appearance of hysteresis in C–V curves is studied by capacitance-voltage, conductance-frequency and current-voltage techniques at different temperatures. ...
Optical properties of diamond-like carbon films subjected to ultraviolet irradiation

Klyui, N.I.; Litovchenko, V.G.; Lukyanov, A.N.; Klyui, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Influence of UV irradiation on optical properties of the nitrogen doped diamond-like carbon (DLC) films was studied. Transparency spectra of the initial, UV irradiated and concentrated UV irradiated films were measured. ...
Ordered Carbon Nanotubes and Globular Opals As a Model of Multiscaling Photonic Crystals

Dovbeshko, G.; Fesenko, O.; Moiseyenko, V.; Gorelik, V.; Boyko, V.; Sobolev, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Experimental data on carbon nanotube carpet and synthetic opals have been compared by visible, infrared spectroscopy, and electron microscopy. Spectral features of the objects under study in infrared region are registered. ...
Polar properties and local piezoelectric response of ferroelectric nanotubes

Morozovska, A.N.; Svechnikov, G.S.; Shiskin, E.I.; Shur, V.Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

We consider the polar properties of the ferroelectric nanotubes within the framework of Landau-Ginzburg-Devonshire phenomenology. The approximate analytical expression for the paraelectric-ferroelectric transition ...
Raman threshold and optical gain bandwidth in silica fibers

Felinskyi, G.S.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

Nonlinearity of the stimulated Raman scattering (SRS) process in single-mode fibers is the creation basis of the new class of modern photonic devices such as fiber Raman lasers and fiber Raman amplifiers. The quantitative ...
Strain effects on the valence band structure, optical transitions, and light gain spectrums in zinc-blende GaN quantum wells

Lokot, L.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

A study for the effects of size quantization and strain effects on the valence band spectra, the interband matrix elements, and the light gain spectrum in zinc-blende GaN quantum wells is presented. In the framework of ...
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

Kolyadina, E.Yu.; Konakova, R.V.; Matveeva, L.A.; Mitin, V.F.; Shynkarenko, V.V.; Atanassova, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those ...
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers

Solntsev, V.S.; Gorbanyuk, T.I.; Litovchenko, V.G.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the ...

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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4 за назвою

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