Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4
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The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Інший ID:
PACS 07.07.Df, 68.43.Bc, 68.47.Fg
Посилання:
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ.
Підтримка:
This work was supported by Science and
Technology Centre in Ukraine, Project № 3819, by
National Academy of science, Project № 51 and № 25-
2008, by Ministry of Science and Еducation, Project №
M175-2007.
Дата:
2008
Переглядів:
736
Завантажень:
468
Анотація:
The adsorboelectric effect arising in multilayered semiconductor structures
based on the porous Si with catalytically active Pd electrodes due to action of low
concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is
studied. The kinetic dependences of the change in output signals of the samples upon
action of different concentrations of gas molecules are studied using the capacitancevoltage
characteristic method. The isotherms of adsorption are derived. A physical model
of the adsorption of hydrogen containing gases in these structures is proposed to explain
the observed phenomena.
