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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Dobrovolskiy, Yu.G.; Perevertailo, V.L.; Shabashkevich, B.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the ...
  • Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial ...
  • Amer, H.H.; Elkordy, M.; Zien, M.; Dahshan, A.; Elshamy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As₃₀Ge₁₀Te₆₀₋xSix (where x = 0, 5, 10, 12 and 20 at.%) thin ...
  • Lashkarev, G.V.; Sichkovskyi, V.I.; Radchenko, M.V.; Aleshkevych, P.; Dmitriev, O.I.; Butorin, P.E.; Kovalyuk, Z.D.; Szymczak, R.; Slawska-Waniewska, A.; Nedelko, N.; Yakiela, R.; Balagurov, A.M.; Beskrovnyy, A.I.; Dobrowolsk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second ...
  • Steblenko, L.P.; Koplak, O.V.; Syvorotka, I.I.; Kravchenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Impurity states in Si/SiO₂ structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO2 are sensitive to the action of magnetic field, which can be revealed ...
  • Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Conductivity of p-Si and p-Ge is considered for the two-band model with due regard for mutual drag of light and heavy holes. It is shown that for small and moderate temperatures this drag significantly diminishes the ...
  • Ushenko, Yu. O.; Balanetsk, V. O.; Angelsky, O. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Performed in this work is a complex statistical, correlation and fractal analysis of coordinate distributions for Jones-matrix elements describing birefringent networks observed in the main types of human amino acids. ...
  • Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.O.; Lytvyn, P.M.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. ...
  • Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. ...
  • Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    First estimated were the parameters of dense part of double electrical layer (DEL) at the interface electrode – solution of the dye in liquid crystal, based on analysis of capacitance-voltage characteristics obtained at ...
  • Kostyukevych, K.V.; Khristosenko, R.V.; Shirshov, Yu.M.; Kostyukevych, S.A.; Samoylov, A.V.; Kalchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    This work is devoted to development of a multi-element gas sensor based on surface plasmon resonance (SPR) to recognize some alcohols. As sensitive layers capable to change their optical properties when interacting with ...
  • Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for different values of fluence with using P+ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Studenyak, I.P.; Izai, V.Yu.; Stephanovich, V.О.; Panko, V.V.; Kúš, P.; Plecenik, A.; Zahoran, M.; Greguš, J.; Roch, T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Implantation of Cu6PS5X (X = I, Br) single crystals was carried out for different values of fluence with using P⁺ ions; the energy of ions was 150 keV. For the implanted Cu₆PS₅X crystals, the structural studies were ...
  • Dolgov, L.; Kravchuk, R.; Rybak, A.; Kiisk, V.; Sildos, I.; Blonskyi, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Wavelength-scaled periodic ripples formed on the Ti surface under the action of femtosecond laser irradiation have been investigated. The ripples were oriented in parallel to the incident light polarization. After initial ...
  • Taghiyev, T.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The effect of γ-radiation with Е = 1.3 MeV energy and Dγ = 10…200 krad dose on photoconductivity and photoluminescence features of GaS₀.₇₅Se₀.₂₅‹Er› single crystals was studied. When analyzing the experimental data it ...
  • Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Kozubovsky, V.R.; Kormosh, V.V.; Alyakshev, I.P.; Lishchenko, N.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Considered in this paper are the possibilities to reduce energy consumption in semiconductor gas sensors with the purpose of their application in multichannel fire gas detectors and gas alarms with an independent power supply.
  • Freik, D.M.; Yurchyshyn, I.K.; Potyak, V.Yu.; Lysiuk, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The thickness dependences of the thermoelectric parameters were observed at room temperature for nanostructures p-PbTe, grown from the vapor phase on polyamide film substrates. An attempt to explain detected dependences ...
  • Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...

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