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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals
Інший ID:
PACS 77.80.Bh, 78.40.Ha
Посилання:
Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals / I.P. Studenyak, V.Yu. Izai, V.О. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 287-293. — Бібліогр.: 15 назв. — англ.
Підтримка:
This work was supported by the Slovak Research and
Development Agency as well as Ministry of Education
and Science, Youth and Sport of Ukraine.
Дата:
2011
Переглядів:
542
Завантажень:
311
Анотація:
Implantation of Cu₆PS₅X (X = I, Br) single crystals was carried out for
different values of fluence with using P+
ions; the energy of ions was 150 keV. For the
implanted Cu₆PS₅X crystals, the structural studies were performed using the scanning
electron microscopy technique and energy-dispersive X-ray spectroscopy. Spectrometric
studies of optical absorption edge and luminescence were carried out within the
temperature range 77…320 K. The influence of ionic implantation on luminescence
spectra, parameters of Urbach absorption edge, parameters of exciton-phonon interaction
as well as ordering-disordering processes in Cu₆PS₅X (X = I, Br) superionic conductors
have been studied.
