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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15 за назвою

Сортувати за: Порядок: Результатів:

  • Yukhymchuk, V.O.; Kostyukevych, S.A.; Dzhagan, V.M.; Milekhin, A.G.; Rodyakina, E.E.; Yanchuk, I.B.; Shepeliavy, P.Ye.; Valakh, M.Ya.; Kostyukevych, K.V.; Lysiuk, V.O.; Tverdokhlib, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Preparation and study of laterally ordered and disordered arrays of Au nanoislands as SERS substrates are reported. Developed technology allows obtaining SERS substrates with long-term stability (up to six months), efficient ...
  • Bortchagovsky, E.G.; Lozovski, V.Z.; Mishakova, T.O.; Hingerl, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We have investigated optical properties of films of gold nanoparticles on Si/SiO₂ substrate by using the method of spectroscopic ellipsometry in dependence on morphology of the films. Different morphology of the films ...
  • Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...
  • Fediv, V.I.; Rudko, G.Yu.; Savchuk, A.I.; Gule, E.G.; Voloshchuk, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    CdS nanoparticles doped with Mn have been synthesized in aqueous solution by using polyvinyl alcohol (PVA) as a capping reagent. Influence of the polymer concentration on the size and concentration of the nanoparticles ...
  • Sorokin, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Zinovchuk, A.V.; Bigun, R.I.; Kudryk, R.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board ...
  • Bacherikov, Yu.Yu.; Zhuk, A.G.; Optasyuk, S.V.; Okhrimenko, O.B.; Kardashov, K.D.; Kozitskiy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the ...
  • Gavrysh, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced ...
  • Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility ...
  • Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The ultrafast interaction between high power laser light and plasma has been studied theoretically. The theoretical simulations are based on the nonlinear Schrödinger equation taking into account group velocity dispersion, ...
  • Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...

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