Анотація:
Considered in this paper is the model that combines appearance of defects
responsible for self-activated (SA) emission in ZnS with its piezoelectric properties.
Being based on analysis of the luminescence spectrum, the authors demonstrate the
influence of mechanical destruction, impact of ultrasound, microwave radiation and
pulsed magnetic field on the emission efficiency for centers of luminescence connected
with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature
synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals
prepared according to the above method as well as more discrete differentiation of phases
present in this material due to development and growth of inner boundaries and surface
under external actions leads to quenched SA-photoluminescence with λ ~ 400–525 nm