Посилання:Technique and setup for diagnostics of p-n junction
to case thermal resistance in high-power gallium nitride LEDs / V.M. Sorokin, R.V. Konakova, Ya.Ya. Kudryk, A.V. Zinovchuk, R.I. Bigun, R.Ya. Kudryk, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 124-128. — Бібліогр.: 11 назв. — англ.
Підтримка:This work is part of the project 31/4.2.3.1/1833 of the
Government Scientific & Technical Target Program
“Development and introduction of energy-saving LED
light sources and illumination systems based on them”.
We present a setup and procedure of studying p-n junction to case thermal
resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A
set of LEDs mounted on a metal-core printed circuit board (MCPCB) were studied. The
contributions to the total thermal resistance from a heavy heat sink, MCPCB, heat slug
and LED chip are separated.