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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Analysis of features of recombination mechanisms in silicon solar cells 
    Korkishko, R.M.; Kostylyov, V.P.; Prima, N.A.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of ...
  • Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions 
    Denysyuk, R.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. ...
  • Comparative studies of optical absorption, photoluminescence and EPR spectra of PbMnI₂ bulk layers and nanocrystals 
    Savchuk, A.I.; Stolyarchuk, I.D.; Savchuk, O.A.; Shporta, O.A.; Stefaniuk, I.; Rogalska, I.; Sheregii, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We report a study of the layered diluted magnetic semiconductor (DMS) Pb₁₋xMnxI₂ in 3D bulk layers and nanocrystal form by using optical absorption, photoluminescence and electron paramagnetic resonance (EPR). The samples ...
  • Dislocation emission caused by different types of nanoscale deformation defects in CdTe 
    Babentsov, V.N.; Boyko, V.A.; Gasan-zade, S.G.; Shepelski, G.A.; Stariy, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point of the CdTe (100), (110), and (111) surfaces at room temperatures was visualized ...
  • Effect of magnetic and electric fields on optical properties of semiconductor spherical layer 
    Holovatsky, V.A.; Bernik, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Theoretical investigation of the influence of magnetic and electric fields on the energy spectrum and wave functions of electron in semiconductor spherical layer has been performed. The case of co-directed electric and ...
  • Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals 
    Konakova, R.V.; Red’ko, S.M.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ...
  • Electro-conductive properties of cadmium octanoate composites with CdS nanoparticles 
    Zhulay, D.S.; Fedorenko, D.V.; Koval’chuk, A.V.; Bugaychuk, S.A.; Klimusheva, G.V.; Mirnaya, T.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electrical properties of mesogenic cadmium octanoate composites containing CdS nanoparticles (NPs) have been studied for the first time. Semiconductor CdS spherical NPs (sizes of 2.5 nm) were chemically synthesized in ...
  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide 
    Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe 
    Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, ...
  • Electron structure of TiO₂ composite films with noble metal nanoparticles 
    Busko, T.O.; Kulish, M.P.; Dmytrenko, O.P.; Vityuk, N.V.; Eremenko, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin nanocrystalline films of ТіО₂, TiO₂/ZrO₂, TiO₂/ZrO₂/SiO₂, TiO₂/ZrO₂/SiO₂/Ag and TiO₂/ZrO₂/SiO₂/Au were prepared using the sol-gel synthesis method. In this paper, we determined the bandgap for direct and indirect ...
  • Extraordinary high-Q resonances in the scattering by a dielectric slab containing a grating of circular cylinders 
    Byelobrov, V.O.; Benson, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An infinite dielectric wire grating in free space is known to possess very high-Q resonances at the frequencies close to the Rayleigh anomalies. Still a practical implementation of such a resonator may require its ...
  • Features of Auger-emission in channeling 
    Kossko, I.A.; Denisov, A.Ye. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) ...
  • High-density data recording via laser thermo-lithography and ion-beam etching 
    Gorbov, I.V.; Kryuchyn, A.A.; Grytsenko, K.P.; Manko, D.Yu.; Borodin, Yu.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Pits 250 – 300 - nm wide were obtained on the surface of thin organic nanocomposite film using master-disc laser-burning station with 405 nm laser beam focused by 0.85 NA lens. The film with obtained pits was used as a ...
  • Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> 
    Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), ...
  • Morphologic and optical characterization of ZnO:Co thin films grown by PLD 
    Vuichyk, M.V.; Tsybrii, Z.F.; Lavoryk, S.R.; Svezhentsova, K.V.; Virt, I.S.; Chizhov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The morphological properties of the surface and optical characteristics of nanocomposite ZnO:Co structures grown on substrates of monocrystalline silicon and sapphire by pulsed laser deposition (PLD) method have been ...
  • On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • Publication Ethics and Publication Malpractice Statement 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics ...
  • Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis 
    Rubish, V.M.; Stefanovich, V.O.; Maryan, V.M.; Mykaylo, O.A.; Shtets, P.P.; Kaynts, D.I.; Yurkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these ...
  • Synthesis of Mn²⁺-doped CdS nanoparticles covered with different adsorptive layers and their application as biosensors 
    Fediv, V.I.; Rudko, G.Yu.; Savchuk, A.I.; Gule, E.G.; Davydenko, I.S.; Olar, O.I.; Volkov, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Colloidal CdS:Mn nanoparticles were synthesized in water solutions of the polymer polyvinyl-pyrrolidone (PVP), the surfactant cetyl-trimethyl-ammonium bromide (CTAB) and the mixture of PVP and CTAB. The sizes of nanoparticles ...

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