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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
Репозиторій DSpace/Manakin
- Домашня сторінка
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
Інший ID:
PACS 61.82.Fk, 61.72.uf, 61.72.S-, 72.20.-i
Посилання:
Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb> / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 25-28. — Бібліогр.: 14 назв. — англ.
Дата:
2014
Переглядів:
693
Завантажень:
365
Анотація:
The influence of isovalent impurity of Si on the kinetics of electron processes
in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of
predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity
significantly reduces the mobility of charge carriers and changes the sign of inequality
ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has
found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the
charge carrier mobility has low radiation stability and decreases with increasing the
magnetic field, while remaining practically unchanged in the region of the intermediate
Н values.
