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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites 
    Totsky, I.M.; Shynkarenko, V.V.; Popov, O.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied the effect of neutron irradiation on composite material HfC-HfB₂- C made using rapid reactive hot pressing technology. The histograms of microhardness and results of X-ray phase analysis, obtained both before ...
  • Effect of optical losses irregularity on wideband fiber Raman amplification for total telecom window in silica fibers 
    Felinskyi, G.S.; Dyriv, M.Y.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Raman threshold pump power and optical amplification band calculations adjusted for attenuation dispersion in the range of total S+C+L telecom window of silica fibers (roughly from 1.46 to 1.62 μm) are presented. It ...
  • Electron mobility in the GaAs/InGaAs/GaAs quantum wells 
    Vainberg, V.V.; Pylypchuk, A.S.; Baidus, N.V.; Zvonkov, B.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the ...
  • Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs) 
    Litsis, O.O.; Ovchynnikov, V.A.; Sliva, T.Yu.; Amirkhanov, V.M.; Sorokin, V.M.; Minyailo, M.A.; Kolomzarov, Yu.V.; Tytarenko, P.A.; Minakova, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, the photo- and electroluminescence properties of new red phosphores based on europium complexes with carbacylamidophosphate (CAPh) ligands and additional aromatic ligands 1,10-phenantroline and 4,4'-bipyridine ...
  • Features of the development of LED spotlight for local illumination of extended objects 
    Kudrautsau, K.A.; Kernazhytski, Y.V.; Tsvirka, V.I.; Trofimov, Yu.V.; Posedko, V.S.; Posedko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The peculiarities of extra narrow-angle LED spotlight development for accent lighting have been described. The optical layout of lighting fixture was developed. The mathematical model that can be used to calculate the ...
  • High-pole LED lighting system 
    Trofimov, Y.V.; Lishik, S.I.; Dolgushin, V.V.; Kernazhytski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Different kinds of design of the 25-meter high-pole LED lighting system with 16 or 9 LED Street Lights “Phoenix” mounted on its crown (corona) have been suggested. The crown consists of two tiers. Some luminaries (8 ...
  • Influence of cation substitution on phase transition and optical absorption edge in Cu₆(P₁₋xAsx)S₅I mixed crystals 
    Studenyak, I.P.; Kranjčec, M.; Kayla, M.I.; Izai, V.Yu.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Cu₆(P₁₋xAsx)S₅I mixed crystals were grown using chemical vapour transport. Temperature isoabsorption investigations of optical absorption edge enable to reveal anomalies typical for the first- and second-order phase ...
  • Light passage through the polymer film of liquid crystal droplets with modified boundary conditions 
    Loiko, V.A.; Zyryanov, V.Ya.; Krakhalev, M.N.; Konkolovich, A.V.; Miskevich, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A method to analyze coherent transmission coefficients and the small-angle light scattering structure of PDLC layer with homogeneous and inhomogeneous boundary conditions on the droplets surface is discussed. For PDLC ...
  • Low-temperature deposition of silicon dioxide films in high-density plasma 
    Yasunas, A.; Kotov, D.; Shiripov, V.; Radzionay, U. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides ...
  • Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, ...
  • On application of heat-conductive plastics in LED technology 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A comparative analysis of the characteristics of heat-conducting plastic was performed. The results of the thermal measurements of two of the same type 3W LED modules installed on heat sink with the same area of ...
  • Optical and electronic properties of Cu-Mn solid solutions 
    Bondar, V.M.; Stashchuk, V.S.; Polianska, O.P.; Chernukha, Ie.O.; Tsuk, B.A.; Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical properties of Cu-Mn alloys with Mn concentrations of 2, 5, 10 and 17.5% (which corresponds to the γ-solid solutions) were studied within a wide spectral range of 0.23 to 2.8 μm (0.44…5.39 eV). Real and ...
  • Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching 
    Tomashyk, V.M.; Kravtsova, A.S.; Tomashyk, Z.F.; Stratiychuk, I.B.; Galkin, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been ...
  • Periodic structures with spherical alumina particles: Transmission and reflection spectra 
    Miskevich, A.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Coherent transmission and reflection coefficients of individual monolayers of spherical alumina particles in the wavelength range from 0.3 to 1.0 μm and multilayers consisting of a set of such monolayers are computed. ...
  • Quasi-active thermal control in LED street lights 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P.; Tsvirko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, the hollow heat sink has been studied. The physical and mathematical model of a hollow heat sink and CFD modeling are proposed for fitting the experimental results. It has been shown that the model of a ...
  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...
  • Silicon carbide phase transition in as-grown 3C-6H polytypes junction 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...
  • Simulating the diffraction grating reflectivity using effective medium theory 
    Goloborodko, A.A.; Goloborodko, N.S.; Oberemok, Ye.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The features of optical radiation interaction with surface of gratings are investigated. The diffraction grating is proposed to be used in the effective medium model to test nanostructured surfaces. This object allows ...
  • Structure effect and orientation distribution of azo dyes on optical anisotropy of dyed PVA-films 
    Filippovich, L.N.; Ariko, N.G.; Almodarresiyeh, H.A.; Shahab, S.N.; Malashko, P.M.; Agabekov, V.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The derivatives of phenylazobenzoic, phenylazosalicylic acids and azobenzeneazonaphthalene were synthesized and employed to prepare polarizing films based on polyvinyl alcohol (PVA). The single-piece transmittance (T0), ...
  • Temperature changes of the exciton transition energy in lead di-iodide nanofilms 
    Pugantseva, O.V.; Kramar, V.M.; Fesiv, I.V.; Kudryavtsev, O.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Adduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton ...

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