Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
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Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Belyaev, A.E. ; Pilipenko, V.A. ; Anischik, V.M. ; Petlitskaya, T.V. ; Klad’ko, V.P. ; Konakova, R.V. ; Boltovets, N.S. ; Korostinskaya, T.V. ; Kapitanchuk, L.M. ; Kudryk, Ya.Ya. ; Vinogradov, A.O. ; Sheremet, V.N.

Інший ID: PACS 73.40.Ns; 73.40.Cg, 85.40.-e

URI: http://dspace.nbuv.gov.ua/handle/123456789/117675

Посилання: Role of dislocations in formation of ohmic contacts to heavily doped n-Si / A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlitskaya, A.V. Sachenko, V.P. Klad’ko, R.V. Konakova, N.S. Boltovets, T.V. Korostinskaya, L.M. Kapitanchuk, Ya.Ya. Kudryk, A.O. Vinogradov, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 99-110. — Бібліогр.: 35 назв. — англ.

Підтримка: This work was supported by the State Fund for Fundamental Researches SFFR-BRFFR-2013 (Project 54.1/012).

Дата: 2013

Завантажень: 539

Role of dislocations in formation of ohmic contacts to heavily doped n-Si

Анотація:

We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ohmic contact at 450С for 10 min in a vacuum of ~10 Pa⁻⁴ . These defects lead to appearance of metal shunts that determine the current flow mechanism in these ohmic contacts. The calculated and experimental temperature dependences of contact resistivity, ρс(Т), are in good agreement. It is shown that ρс increases with temperature. This is characteristic of a model of ohmic contacts with a high dislocation density in the near-contact region of semiconductor

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