Перегляд за автором "Talanin, I.E."

Сортувати за: Порядок: Результатів:

  • Classification of microdefects in semiconducting silicon 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a ...
  • Modelling vacancy microvoid formation in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Koryagin, S.A.; Semikina, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An alternative mathematical model of vacancy microvoid formation in dislocation-free silicon single crystals was represented. The analysis of conditions of microvoid nucleation inside the bulk of crystals during cooling ...
  • Nucleation, growth and transformation of microdefects in FZ-Si 
    Talanin, V.I.; Talanin, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at ...
  • Recombination parameters of point defects in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E. (Functional Materials, 2006)
    The recombination parameters of the point defects dynamics (recombination barrier, recombination time, recombination factor) at high and low temperatures are discussed proceeding from the heterogeneous mechanism of grown-in ...
  • The aggregation of point defetc in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Voronin, A.A.; Sirota, A.V. (Functional Materials, 2007)
    The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines ...