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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Filter for TV and video cameras 
    Berezhinsky, L.I.; Dae-Yong Park; Chang-Min Sung; Kwang-Ho Kwon; Sang-Hoon Chai (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 28 alternating SiO₂ and TiO₂ layers. The filter was calculated using the principle of unequal-thickness layers. This filter ...
  • Finding of the optimal parameters of animated and stereographic rainbow diffractive images 
    Borisov, I.S.; Girnyk, V.I.; Kostyukevych, S.A.; Grygoruk, V.I.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    We have considered the basic aspects of the technology of animated and stereographic rainbow images. These images can be included in Optical Security Devices (OSDs) in order to increase their structure complexity and to ...
  • Fine structure of NQR spectra in GaSe 
    Kovalyuk, Z.D.; Lastivka, G.I.; Khandozhko, О.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability ...
  • Finite-difference time-domain method calculation of light propagation through H-PDLC 
    Kubytskyi, V.; Reshetnyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Presented is the study of the diffraction properties of transmission holographic polymer dispersed liquid crystal (H-PDLC) grating. We constructed a two-dimensional model of H-PDLC film with cylindrical LC droplets. ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Fluctuations of current, electroluminescence and acoustic emission in light-emitting А³В⁵ heterostructures 
    Vlasenko, A.I.; Lyashenko, O.V.; Oleksenko, P.F.; Veleschuk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    It is shown, that in heterostructures based on A³B⁵ compounds acoustic emission occurrence, current and light fluctuations, evolution electroluminescence spectrums, current-voltage characteristics degradation occur ...
  • Fluorescent Mueller-matrix polarimetry of biological tissues in differentiation of benign and malignant tumors 
    Ushenko, Yu.O.; Lakusta, I.I.; Olar, O.I.; Novakovska, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The work is aimed at investigation of diagnostic efficiency provided by a new azimuthally stable Mueller-matrix method for analyzing laser fluorescence coordinate distributions characterizing biological tissue histological ...
  • Fluorescent Mueller-matrix polarimetry of biological tissues in differentiation of benign and malignant tumors 
    Ushenko, Yu.O.; Lakusta, I.I.; Olar, O.I.; Novakovska, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The work is aimed at investigation of diagnostic efficiency provided by a new azimuthally stable Mueller-matrix method for analyzing laser fluorescence coordinate distributions characterizing biological tissue histological ...
  • Formation and activation of defects in films of AIVBVI compounds in the process of growing from vapor phase 
    Saliy, Ya.P.; Freik, I.M.; Prokopiv (Jr), V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The work has suggested an adequate model describing formation of defects in films of AIVBVI compounds in vapor-phase growth. Being based on this model, it has given an analytical description of dependences for film ...
  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Formation of nanostructured state in LaBGeO₅ monolithic glass using pulsed magnetic fields 
    Doroshkevich, A.S.; Shylo, A.V.; Volkova, G.K.; Glazunova, V.A.; Perekrestova, L.D.; Lyubchik, S.B.; Konstantinova, T.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Using the methods of transmission electron microscopy, X-ray structure analysis and thermal differential analysis, it has been discovered that the pulsed magnetic field (PMF) intensifies homogeneous crystallization in ...
  • Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity 
    Boltovets, M.S.; Ivanov, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Shynkarenko, V.V.; Sheremet, V.M.; Sveshnikov, Yu.N.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We propose multilayer ohmic contacts to n- and p-GaN layers, with titanium boride as diffusion barrier. It is shown that the optimal method of contact resistivity measurement is the transmission line method (TLM) with ...
  • Formation of silicon nanoclusters in buried ultra-thin oxide layers 
    Oberemok, O.S.; Litovchenko, V.G.; Gamov, D.V.; Popov, V.G.; Melnik, V.P.; Gudymenko, O.Yo.; Nikirin, V.A.; Khatsevich, І.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for ...
  • Fourier Raman spectroscopy studies of the As₄₀S₆₀-xSex glasses 
    Stronski, A.V.; Vlček, M.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the investigations of As₄₀S₆₀-xSex glasses with the help of Fourier Raman spectroscopy. The results of Raman spectroscopy investigations indicate increased presence of non-stoichiometric ...
  • Fourier-Stokes polarimetry of fields corresponding to linearly and circularly polarized birefringent protein networks 
    Karachevtsev, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Considered in this work are the possibilities to use the method of FourierStokes polarimetry for diagnostics of optical anisotropy inherent to polycrystalline networks of biological layers. The authors have offered a ...
  • Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description 
    Shpotyuk, O.I.; Vakiv, M.M.; Shpotyuk, M.V.; Ingram, A.; Filipecki, J.; Vaskiv, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A newly modified correlation equation between defect-related positron lifetime t₂ (ns) defined within two-state model and corresponding radius R (Å) of freevolume positron traps in the full non-linear form or simplified ...
  • Frequency-angular spectra of the stimulated Raman scattering parametric components under self-action 
    Ivanisik, А.І.; Isaenko, O.Iu.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    It’s theoretically proved that in self-focusing mode of exciting radiation, selfphase modulation, and the relaxation oscillations of the nonlinear polarization amplitude, the frequency-angular structure of the parametric ...
  • Frequency-dependent dielectric coefficients of TlInS₂ amorphous films 
    Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Fullerene and fullerene-aluminum nanostructured films as sensitive layers for gas sensors 
    Grynko, D.; Burlachenko, J.; Kukla, O.; Kruglenko, I.; Belyaev, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The responses of quartz crystal microbalance (QCM) sensors coated by fullerene and fullerene-aluminum films to ethanol and water vapors are investigated. The possibility of controlling the adsorption properties of such ...
  • Functionally graded PbTe-based compound for thermoelectric applications 
    Dashevsky, Z.; Dariel, M.P.; Shusterman, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals ...

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