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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • 1,4-bis(2,2-diphenylethenyl)benzene as an efficient emitting material for organic light emitting diodes 
    Fenenko, L.; Guoliang Mao; Akihiro Orita; Junzo Otera; Smertenko, P.; Svechnikov, G.; Jun-ichi Nishide; Hiroyuki Sasabe; Chihaya Adachi (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We report on the photophysical properties of 1,4-bis(2,2-diphenylethenyl)benzene (PEB) in a solution and a solid state. A poor blue photoluminescence efficiency of PEB in a solution dramatically increases in the deposited ...
  • 3C-6H transformation in heated cubic silicon carbide 3C-SiC 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov ...
  • 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
  • A biosensor approach to probe the structure and function of the adsorbed proteins: fibrinogen at the gold surface 
    Snopok, B.A.; Kostyukevych, K.V.; Rengevych, O.V.; Shirshov, Yu.M.; Venger, E.F.; Kolesnikova, I.N.; Lugovskoi, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The kinetics of adsorption and surface structure of adsorbed layers of the human fibrinogen on the gold surface, determined by Surface Plasmon Resonance (SPR) and Atomic Force Microscopy (AFM) analysis, was employed to ...
  • About influences of different actions on spectra of impurity photoluminescence in GaAs 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown ...
  • About manifestation of the piezojunction effect in diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. ...
  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • About self-activated orange emission in ZnO 
    Markevich, I.V.; Stara, T.R.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL ...
  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents 
    Gorishnyi, M.P.; Shevchuk, A.F.; Manzhara, V.S.; Koval'chuk, A.V.; Koval'chuk, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes of two types K1 and K2 in a series of isotropic solvents were studied. It was shown that the photoluminescent spectra depend both on nature ...
  • Absorption spectra and chromonic phase in aqueous solution of perylenetetracarboxylic bisimides derivatives 
    Camorani, P.; Furier, M.; Kachkovskii, O.; Piryatinskiy, Yu.; Slominskii, Yu.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this article we report the complex investigation of perylenetetracarboxylic bisimides derivatives in water solution. The results deal with all possible concentration in wide range of temperature. The experimentally ...
  • Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution 
    Selishchev, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution ...
  • Accurate numerical modelling the GaAs MESFET current-voltage characteristics 
    Merabtine, N.; Khemissi, S.; Zaabat, M.; Belgat, M.; Kenzai, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional ...
  • Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures 
    Veleschuk, V.P.; Lyashenko, O.V.; Vlasenko, Z.K.; Kysselyuk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic ...
  • Acoustic-emission method for controlling the defect-formation process in light-emitting structures 
    Lyashenko, O.V.; Vlasenko, A.I.; Veleschuk, V.P.; Kisseluk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence ...
  • Acoustic-stimulated relaxation of GaAs₁₋хPх LEDs electroluminescence intensity 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Olikh, Ya.M.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The effect of ultrasonic (US) treatment on electroluminescence of initial and irradiated with 2-MeV electrons (Φ = 8.24·10¹⁴ e/cm²) GaAs-GaP LEDs grown on solid solution base was studied. It was found that luminescence ...
  • Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys 
    Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures 
    Olikh, O.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated ...
  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Active inductances controlled in GaAs MESFET technology 
    Benbouza, M.S.; Kenzai-Azizi, C.; Merabtine, N.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the ...

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