Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3
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dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Basanets, V.V.
dc.contributor.author	Ivanov, V.N.
dc.contributor.author	Krivutsa, V.A.
dc.contributor.author	Tsvir, A.V.
dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Lyapin, V.G.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Soloviev, E.A.
dc.contributor.author	Venger, E.F.
dc.contributor.author	Voitsikhovskyi, D.I.
dc.contributor.author	Kholevchuk, V.V.
dc.contributor.author	Mitin, V.F.
dc.date.accessioned	2017-06-13T16:15:22Z
dc.date.available	2017-06-13T16:15:22Z
dc.date.issued	2000
dc.identifier.citation	Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals / N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 359-370. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 07.07.D, 81.05.J, 85.30.K
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121166
dc.description.abstract	We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.	uk_UA
dc.description.sponsorship	The development of varactor diodes and resonant tunneling diodes, as well as fast-operating switching diodes for the 33-78 GHz frequency range and IMPATT diodes for the 33-37 and 70-77 GHz frequency ranges, was carried out under the INCO-COPERNICUS Program (Project No 977131 "MEMSWAVE").	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA