Complex destruction of near-surface silicon layers of Si-SiO₂ structure

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 4
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dc.contributor.author	Yatsunskiy, I.R.
dc.contributor.author	Kulinich, O.A.
dc.date.accessioned	2017-05-30T16:31:53Z
dc.date.available	2017-05-30T16:31:53Z
dc.date.issued	2010
dc.identifier.citation	Complex destruction of near-surface silicon layers of Si-SiO₂ structure / I.R. Yatsunskiy, O.A. Kulinich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 4. — С. 418-421. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.05.cm, 61.72.Cc, 68.35.bg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118578
dc.description.abstract	The structure of near-surface silicon layers of Si-SiO₂ has been investigated. It was observed the complex destruction of these layers caused by relaxation of mechanical stresses. The magnitude of mechanical stresses depends not only on parameters of silicon dioxide and silicon but on presence of initial defects in silicon. We have proposed the defect formation mechanism of near-surface layers in Si-SiO₂ structure, and it has been revealed the influence of impurities on this process.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Complex destruction of near-surface silicon layers of Si-SiO₂ structure	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA