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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment 
    Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Lytvyn, O.S.; Prokopenko, I.V.; Ivanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The investigations of TiB₂/GaAs and Au-TiB₂/GaAs structural characteristics in dependence on technological regimes of sputtering and TiB2-film thicknesses as well as structural relaxation processes at short-term thermal ...
  • Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique 
    Volodin, N.M.; Zavyalova, L.V.; Kirillov, A.I.; Svechnikov, S.V.; Prokopenko, I.V.; Khanova, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, ...
  • Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique 
    Movchan, S.; Sizov, F.; Tetyorkin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF₂ single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures ...
  • Varistor-like current-voltage characteristic of porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Shutov, B.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The porous silicon (PS) current-voltage characteristic (CVC) has measured in transverse and longitudinal applied electric field. The obtained CVC has a varistor-like shape. Besides the practical application this confirms ...
  • Semiconductor sensors for dosimetry of epithermal neutrons 
    Litovchenko, P.G.; Moss, R.; Stecher-Rasmussen, F.; Appelman, K.; Barabash, L.I.; Kibkalo, T.I.; Lastovetsky, V.F.; Litovchenko, A.P.; Pinkovska, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes ...
  • Interface electronic properties of eterojunctions based on nanocrystalline silicon 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...
  • Separate determination of thickness and optical parameters by surface plasmon resonance: accuracy consideration 
    Rengevych, O.V.; Shirshov, Yu.M.; Ushenin, Yu.V; Beketov, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Reliability and precision of characterization of surface layers by SPR method was evaluated with relation to the experimental conditions and the strategy of extracting the film parameters. Consideration is bound up with ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Kononchuk, G.L.; Yegorov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    On the basis of the general Lamb model the set of six coupled nonlinear differential equations has been derived for two-mode l = 0.63 mm laser operation with the presence both amplitude and phase anisotropy and axial ...
  • Bipolarons in anisotropic crystals and low dimensional structures 
    Kashirina, N.I.; Mozdor, E.V.; Pashitskij, E.A.; Sheka, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We consider a simple bipolaron approach to description of anisotropic crystals in the strongcoupling limit. We have taken into account anisotropy of effective band masses and dielectric constants of crystals. The calculations ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Investigation of the photoelastic effect in si at high values of the absorptivity 
    Boiko, I.I.; Venger, Ye.F.; Nikitenko, E.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band ...
  • Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers 
    Indutnyi, I.Z.; Shepeliavyi, P.E.; Indutnyi, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the ...
  • Raman spectra of Ag- and Cu- photodoped chalcogenide films 
    Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...
  • Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness 
    Snopok, B.A.; Lampeka, Ya.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Diffractometric and optical measurements showed that at considerable (>200 oK) difference between sublimation temperature and substrate one dibenzotetraazaannulene forms well oriented films structure of which depends on ...
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...

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