ЗМІСТ

Kashirina N.I., Mozdor E.V., Pashitskij E.A., Sheka V.I.
Bipolarons in anisotropic crystals and low dimensional structures

Kaganovich E.B., Kirillova S.I., Manoilov E.G., Primachenko V.E., Svechnikov S.V.
Interface electronic properties of eterojunctions based on nanocrystalline silicon

Kulish N.R., Shwarts Yu.M., Borblik V.L., Venger Ye.F., Sokolov V.N.
Self-consistent method for optimization of parameters of diode temperature sensors

Rengevych O.V., Shirshov Yu.M., Ushenin Yu.V, Beketov A.G.
Separate determination of thickness and optical parameters by surface plasmon resonance: accuracy consideration

Kononchuk G.L., Yegorov S.M.
Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field

Sachenko A.V.; Gorban A.P.
On the collection of photocurrent in solar cells with a contact grid

Gorban A.P., Kostylyov V.P., Litovchenko V.G., Sachenko A.V., Serba A.A., Sokolovskyi I.O., Chernenko V.V.
The study of solar cells with back side contacts at low illumination

Shevchenko V.B., Makara V.A., Vakulenko O.V., Dacenko O.I., Rudenko O.V.
Evidence for photochemical transformations in porous silicon

Boiko I.I., Venger Ye.F., Nikitenko E.V., Serdega B.K.
Investigation of the photoelastic effect in si at high values of the absorptivity

Indutnyi I.Z., Shepeliavyi P.E., Indutnyi V.I.
Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers

Stronski A.V., Vlcek M., Stetsun A.I., Sklenar A., Shepeliavyi P.E.
Raman spectra of Ag- and Cu- photodoped chalcogenide films

Snopok B.A., Lampeka Ya.D.
Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness

Kryshtab T.G., Lytvyn P.M., Mazin M.O., Lytvyn O.S., Prokopenko I.V., Ivanov V.N.
TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment

Volodin N.M., Zavyalova L.V., Kirillov A.I., Svechnikov S.V., Prokopenko I.V., Khanova A.V.
Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique

Movchan S., Sizov F., Tetyorkin V.
Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

Vakulenko O.V., Kondratenko S.V., Shutov B.M.
Varistor-like current-voltage characteristic of porous silicon

Litovchenko P.G., Moss R., Stecher-Rasmussen F., Appelman K., Barabash L.I., Kibkalo T.I., Lastovetsky V.F., Litovchenko A.P., Pinkovska M.B.
Semiconductor sensors for dosimetry of epithermal neutrons