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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors 
    Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
  • Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals 
    Dubovik, M.F.; Tolmachev, A.V.; Grinyov, B.V.; Grin, L.A.; Dolzhenkova, E.F.; Dobrotvorskaya, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase ...
  • Melt instabilities on semiconductor surfaces induced by laser radiation 
    Bonchik, A.Yu.; Dacko, B.J.; Demchuk, V.I.; Kiyak, S.G.; Palyvoda, I.P.; Shnyr, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures 
    Shwarts, Yu.M.; Kondrachuk, A.V.; Shwarts, M.M.; Shpinar, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The ...
  • Optical properties of thin gold film 
    Kovalenko, S.A.; Fedorovych, R.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of studing optical constants of thin gold films are given. The values of refraction and extinction coefficients (n, æ, respectively) are calculated from reflection and transmission spectra accordingly to traditional ...
  • Paraelectric properties of PbTe doped with Ga 
    Tetyorkin, V.; Movchan, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of ...
  • PEPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum 
    Bazhenov, M.Yu.; Golod, P.I.; Grabovskyy, V.V.; Kurdyukov, V.V.; Tolmachev, A.I.; Ilchenko, A.Ya.; Sokolov, N.I.; Zahaykevich, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Phase hologram recording is based on photoconductivity which appears in polymer molecular semiconductor film being exposed to light [1]. Photocurrent threshold depends on energy gap between valence and conduction bands of ...
  • Photoinduced structural changes in As₁₀₀₋xSx layers 
    Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride 
    Ilchuk, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier ...
  • Physical mechanism of temperature oscillations in ferroelectric ceramics conduction 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For ferroelectric ceramics of the lead zirconate-titanate PZT-5 system the results of investigations of conduction temperature oscillations are presented. An explanation for the effect of conduction temperature oscillations ...
  • Polarization operator of phonons in quadratic approximation 
    Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using the method of the retarded Green function the polarization operator of phonons has been calculated with the simultaneous account for the linear and quadratic terms in the Hamilton operator of exciton-phonon interaction. ...
  • Properties and application of the unequal thickness two-component interference systems 
    Fekeshgazi, I.V.; Pervak, V.Yu.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The methods of synthesis and designing of the two-component unequal thickness multilayer interference systems as well as interconnection of their indices of layers are presented. A solution of the problem of suppressing ...
  • Simple waveguide model of arbitrary filled plane-plane cavity 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some waveguide features responsible for angular structure of a plane-plane cavity output emission, which were not discussed before, are considered. A number of common regularities in mode structure of such cavity at the ...
  • Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing 
    Agueev, O.A.; Svetlichny, A.M.; Soloviev, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General ...
  • Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy 
    Kladko, V.P.; Datsenko, L.I.; Maksimenko, Z.V.; Lytvyn, O.S.; Prokopenko, I.V.; Zytkiewicz, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for ...
  • Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating 
    Agueev, O.A.; Svetlichnyi, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize ...
  • Thermoelectric properties of solid solutions based on tin telluride 
    Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism ...

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