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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за назвою

Сортувати за: Порядок: Результатів:

  • Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Selishchev, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution ...
  • Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the paper proposed are some simple modifications of plane-parallel and unstable telescopic resonators the most widely used in excimer lasers. These can increase output energy, density of emission power and improve the ...
  • Burachas, S.F.; Nagornaya, L.L.; Onishchenko, G.M.; Piven, L.A.; Pirogov, E.N.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    An improved production technology has been developed for scintillation single crystals based on complex oxides with large atomic number – bismuth germanate (BGO), gadolinium silicate (GSO), cadmium tungstate (CWO) and lead ...
  • Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • Zorenko, Yu.; Gorbenko, V.; Konstankevych, I.; Grinev, B.; Globus, M.; Batentschuk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Possibility of producing screens of X-ray detectors using liquid phase epitaxy on Y₃Al₅O₁₂ substrates covered by Lu₃Al₅O₁₂:Ce single crystalline films (SCF) is studied. Optical, luminescent and luminous characteristics of ...
  • Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Kravets, V.G.; Vinnichenko, K.L.; Prygun, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Efficiency of medium choice for optical information recording is generally determined by homogeneity degree of material on the recording surface and by its structure on the film depth. In this respect pyrosolynes should ...
  • Prokopenko, I.V.; Kislovskii, E.N.; Olikhovskii, S.I.; Tkach, V.M.; Lytvyn, P.M.; Vladimirova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and ...
  • Boltovets, N.S.; Goncharuk, N.M.; Krivutsa, V.A.; Chaika, V.E.; Konakova, R.V.; Milenin, V.V.; Soloviev, E.A.; Tagaev, M.B.; Voitsikhovskyi, D.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for ...
  • Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Rigorous solution of the optical beam diffraction problem on half plane is represented. Solution is described to representation of edge dislocation wave (EDW) that was introduced for describing the diffraction plane wave ...
  • Voznyy, M.V.; Gorley, P.M.; Schenderovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well ...
  • Kruglenko, I.V.; Snopok, B.A.; Shirshov, Y.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The reliability of Electronic nose applications is mainly based on the sensitivity, repeatability and discernment properties of the sensors composing the array. Due to nature of the chosen sensitive layers, the sensors are ...
  • Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Research results of optical constants of thin gold films of different thickness are given in the paper. Their structure was studied using atomic-force microscope. Values of refraction n and absorption k coefficients were ...
  • Goncharenko, A.V.; Snopok, B.A.; Shirshov, Yu.M.; Venger, E.F.; Zavadskii, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We derive the recurrence dispersion equations for natural modes of a many-layer planar system. As an illustration a five-layer planar system is considered, and solutions for guided-wave polaritons of such a system are ...
  • Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...

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