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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за датою випуску

Сортувати за: Порядок: Результатів:

  • Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The paper represents the technique for residual error evaluation after two-points linear non-uniformity correction. This technique takes into consideration parameters of an imaging system, reference sources, non-linearity ...
  • Gnatyuk, V.A.; Gorodnychenko, O.S.; Mozol, P.O.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate ...
  • Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    New materials and technologies for large scale IR arrays, readouts for them and several principal trends of IR large scale array detectors development as well as their applications in different weather conditions are briefly ...
  • Shaykevich, I.A.; Kolesnyk, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Optical and structural properties of ultrathin binary Al/Cr composites were investigated in this paper. We ascertained that the samples did not have a long-range order, and their optical properties are defined by resonance ...
  • Pokutnyi, S.I.; Kovalchuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the framework of the dipole approximation we predict theoretically high magnitudes of: (1) oscillator strength transitions, and (2) the resonance light cattering (σss(w, a)) and absorption (σabs(ω, a)) cross-sections. ...
  • Baschenko, S.M.; Blonskiy, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Science and technology multi-purposes, wide-functional excimer laser complex consisting of two precisely and fine synchronized excimer lasers and assembled on the common optical table and added by high efficient Stimulated ...
  • Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of investigations of strain effect in surface acoustic wave (SAW) elements with a piezoelectric ceramic (PC) acoustic line are presented. The choice of PC material for acoustic line is substantiated. Some ...
  • Neimash, V.B.; Puzenko, O.O.; Kraitchinskii, A.M.; Krasko, M.M.; Putselyk, S.; Claeys, C.; Simoen, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations ...
  • Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...
  • Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Rigorous solution of the optical beam diffraction problem on half plane is represented. Solution is described to representation of edge dislocation wave (EDW) that was introduced for describing the diffraction plane wave ...
  • Selishchev, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for ...
  • Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • Fedorenko, L.; Medvid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the ...
  • Davidenko, N.A.; Kuvshinsky, N.G.; Syromiatnikov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Features of charges photogeneration in the films of poly-N-epoxypropylcarbazole doped with compounds with intramolecular charge transfer used in holographic recording media are investigated. Influence of an external electric ...
  • Virt, I.S.; Gorbunov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation ...
  • Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Griban, V.M.; Melnichuk, O.V.; Ovander, L.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We considered the effect of static uniform electric field on the process of two-photon excitonic absorption of light in crystals. The matrix element that determines the above process was calculated using a linear (in the ...
  • Rogalski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, ...
  • Sachenko, A.V.; Gorban, A.P.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation ...

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