Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals
Інший ID:
PACS 61.80, 72, 72.20 JV;
Посилання:
Effect of thermal neutron irradiation on the electrophysical and photoelectric properties of Hg₀.₈Cd₀.₂Te crystals / I.S. Virt, V.V. Gorbunov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 35-38. — Бібліогр.: 13 назв. — англ.
Підтримка:
Thermal neutron irradiation has been perfomed at the nuclear reactor of the Institute for Nuclear Researches NASU. The authors are grateful to Dr. M.V. Pashkovskii for his valuable remarks and interest to this work.
Дата:
2000
Переглядів:
594
Завантажень:
402
Анотація:
We have studied experimentally the effect of thermal neutron irradiation on the electrophysical and photoelectric parameters of Hg₁₋xCdxTe crystals. The irradiation was shown to produce both donor- and acceptor-type radiation defects. In this case the majority charge carrier mobility decreases significantly. An analysis is given of a model for radiation defect production. The photoconduction processes are explained from the standpoint of clusterization of such radiation defects.
