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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Effect of nonuniform doping profile on thermometric performance of diode temperature sensors 
    Sokolov, V.N.; Shwarts, Yu.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused ...
  • Influence of ion implantation and annealing on composition and structure of GaAs surface 
    Normuradov, M.T.; Umirzakov, B.E.; Tashmukhamedova, D.A.; Tashatov, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions ...
  • Light absorption by excited exciton states in layered InSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the ...
  • Mechanism of 6H-3C transformation in SiC 
    Vlaskina, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid ...
  • Model of dynamic indication in the bar graph form 
    Bushma, A.V.; Sypko, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The main principles of formation of dynamic bar graph representation using display with a matrix electric connection of elements have been considered in this work. Applying the theory of sets we formalized a synthesis of ...
  • Optical and magneto-optical properties of thin films for high density information recording 
    Kravets, V.G.; Poperenko, L.V.; Yurgelevich, I.V.; Petford-Long, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    It was found that optical and magneto-optical (MO) properties of thin film materials have potential application for blue laser recording. For this purpose, we have used a combination of ellipsometric and polar MO Kerr ...
  • Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures 
    Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic ...
  • Performance of optical and hybrid joint transform correlators for tasks of optical security 
    Muravsky, L.I.; Kulynych, Ya.P.; Maksymenko, O.P.; Voronyak, T.I.; Pogan, L.Y.; Vladimirov, F.L.; Kostyukevych, S.A.; Fitio, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Performance of optical and hybrid joint transform correlators (JTCs) for security verification of optical marks containing transformed phase masks (PMs) is studied. The peak-to-noise ratio (PNR) and relative intensity of ...
  • Photoelectric properties of ₂O₃-pGaSe-pInSe cascade heterostructures 
    Savchyn, V.P.; Stakhira, J.M.; Fiyala, Ya.M.; Furtak, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Cascade heterostructure of nGa₂O₃-pGaSe-pInSe was created, and a corresponding band energy diagram was built. Electrical and photoelectric properties of this structure were investigated. Due to isotype pGaSe-pInSe ...
  • Photoluminescent films of nanocrystalline silicon doped with metals 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V.; Venger, E.F.; Bazylyuk, I.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ...
  • Polar magneto-optical Kerr effect studies of interlayer exchange coupling in Fe/Tb bilayers and Fe/Au/Tb trilayers 
    Shypil, E.V.; Pogorilyy, A.M.; Pogoryelov, Ye.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Interlayer exchange coupling was studied. The investigations were carried out on bilayer (Fe/Tb) and trilayer (Fe/Au/Tb) ultrathin film structures. The films on silica substrate were prepared by electron-beam evaporation ...
  • Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines 
    Boltovets, N.S.; Kashin, G.N.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated electrophysical properties of the SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures that are used in technological process when manufacturing transmission lines for microwave integrated circuits. The SiO₂-GaAs ...
  • Recrystallization processes in screen-printed CdS films 
    Klad’ko, V.P.; Lytvyn, O.S.; Lytvyn, P.M.; Osipenok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F.; Korchevoy, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the ...
  • Solid-state laser with self-stabilized or linearly chirped output frequency 
    Lopiitchouk, M.; Peshko, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The specific regimes of the linear tuning and the frequency self-stabilization were proposed and analyzed theoretically in a diode pumped solid-state laser with a thin-film metallic selector.
  • The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices 
    Ahmad, I.; Omar, A.; Mikdad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal ...
  • The influence of depolarization field on dielectric and pyroelectric properties of ferroelectric films 
    Glinchuk, M.D.; Eliseev, E.A.; Stephanovich, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Calculations of the spontaneous polarization (Ps), dielectric susceptibility (c) and pyroelectric coefficient (P) of the ferroelectric films have been performed in the thermodynamic phenomenological theory framework. The ...
  • Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption 
    Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...

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