ЗМІСТ

Stakhira J.M., Stakhira R.J.
The energy structure of free electrons for semiconductor in the field of cylindrical symmetry

Ibragimov G.B.
Theory of the free-carrier absorption in quantum wires with boundary roughness scattering

Kiv A.E., Maksymova T.I., Moiseenko N.V., Soloviev V.N.
High-temperature configurations of dimers in Si (001) surface layers

Pavljuk S.P.
High-power low-frequency current oscillations in germanium samples

Moskvin P.P., Rashkovets'kyi L.V., Kavertsev S.V., Zhovnir G.I., Ruden'kyi A.O.
Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system

Ammerlaan C.A.J.
Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry

Еvtukh А.А., Indutnyy I.Z., Lisovskyy I.P., Litvin Yu.M., Litovchenko V.G., Lytvyn P.М., Мazunov D.О., Rassamakin Yu.V., Shepeliavyi P.Е.
Electron field emission from SiO_x films

Budzulyak S.I., Ermakov V.M., Kyjak B.R., Kolomoets V.V., Machulin V.F., Novoselets M.K., Panasjuk L.I., Sus' B.B., Venger E.F.
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Balovsyak S.V., Fodchuk I.M., Lytvyn P.M.
Determination of surface parameters of solids by methods of X-ray total external reflection

Bogoboyashchyy V.V., Elizarov A.I., Kurbanov K.R.
Diffusion and mobility of native point defects in narrow-gap Hg_1-xCd_xTe crystals

Figielski T., Wosinski T., Morawski A., Pelya1 O., Makosa A., Dobrowolski W., Wrobel J., Sadowski J., Jagielski J., Ratajczak J.
Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As

Krukovsky S.I., Zayachuk D.M., Rybak O.V., Mryhin I.O.
High-resistance low-doped GaAs and AlGaAs layers obtained by LPE

Wosinski T.
Electrical activity of misfit dislocations in GaAs-based heterostructures

Hartnagel H.
Electron emission modulation effects in micro-size structures

Andriyevsky B.V., Romanyuk M.O., Dumka Yu.A.
Changes of anisotropy of dilatative and optical properties of DGN crystal at ferroelectric phase transition

Halyan V.V., Bozhko V.V.
Relaxation and thermoinduced processes in glassy HgSe_(x)-GeSe_2(1-x) alloys

Rubish V.M.
Electric and dielectric properties of glasses of Cu-Sb-S-I system

Belyaeva A.I., Galuza A.A., Kudlenko A.D.
Origin of surface layer on common substrates for functional material films probed by ellipsometry

Kamuz A.M., Oleksenko P.Ph., Kamuz O.A., Kamuz V.G.
The way of photonic crystal formation in A³B⁵ and A²B⁶ semiconductors

Biswas A.K., Sarkar S.K.
An arithmetic logic unit of a computer based on single electron transport system

Borblik V.L., Shwarts Yu.M., Venger E.F.
About manifestation of the piezojunction effect in diode temperature sensors

Zabolotny M.A.
Charge carrier generation in photosensitive amorphous molecular semiconductors

Dovbeshko G.I., Repnytska O.P., Obraztsova E.D., Shtogun Ya.V., Andreev E.O.
Study of DNA interaction with carbon nanotubes